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| 型號(hào)： | CY8C29866 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | Mixed Signal Array |
| 中文描述： | 混合信號(hào)陣列 |
| 文件頁數(shù)： | 25/40頁 |
| 文件大?。?/td> | 474K |
| 代理商： | CY8C29866 |
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August 3, 2004
Document No. 38-12013 Rev. *F
25
CY8C29x66 Preliminary Data Sheet
3. Electrical Specifications
3.3.9
DC Programming Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40
°
C
≤
T
A
≤
85
°
C, or 3.0V to 3.6V and -40
°
C
≤
T
A
≤
85
°
C, respectively. Typical parameters apply to 5V and 3.3V at 25
°
C and
are for design guidance only.
Table 3-15: DC Programming Specifications
Symbol
I
DDP
V
ILP
V
IHP
I
ILP
Description
Min
Typ
Max
Units
mA
Notes
Supply Current During Programming or Verify
–
10
30
Input Low Voltage During Programming or Verify
–
–
0.8
V
Input High Voltage During Programming or Verify
2.2
–
–
V
Input Current when Applying Vilp to P1[0] or P1[1] During
Programming or Verify
Input Current when Applying Vihp to P1[0] or P1[1] During
Programming or Verify
Output Low Voltage During Programming or Verify
–
–
0.2
mA
Driving internal pull-down resistor.
I
IHP
–
–
1.5
mA
Driving internal pull-down resistor.
V
OLV
V
OHV
–
–
Vss + 0.75 V
Output High Voltage During Programming or Verify
Vdd
- 1.0
50,000
–
Vdd
V
Flash
ENPB
Flash
ENT
Flash
DR
Flash Endurance (per block)
–
–
–
Erase/write cycles per block.
Flash Endurance (total)
a
Flash Data Retention
a. A maximumof 36 x 50,000 block endurance cycles is allowed. This may be balanced between operations on 36x1 blocks of 50,000 maximumcycles each, 36x2 blocks of
25,000 maximumcycles each, or 36x4 blocks of 12,500 maximumcycles each (to limt the total number of cycles to 36x50,000 and that no single block ever sees more than
50,000 cycles).
For the full industrial range, the user must employ a temperature sensor user module (FlashTemp) and feed the result to the temperature argument before writing. Refer to
the Flash APIs Application Note AN2015 at http://wwwcypress.comunder Application Notes for more information.
1,800,000
–
–
–
Erase/write cycles.
10
–
–
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY8C29466-24PXI | Mixed Signal Array |
| CY8C29566-24AXI | Mixed Signal Array |
| CY8C29566-24AXIT | Mixed Signal Array |
| CYM7232 | DRAM Accelerator Module(DRAM加速器模塊) |
| CYM7264 | DRAM Accelerator Module(DRAM加速器模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY8C29866-24AXI | 功能描述:可編程片上系統(tǒng) - PSoC IC MCU 32K FLASH 2K SRAM RoHS:否 制造商:Cypress Semiconductor 核心:8051 處理器系列:CY8C36 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:67 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:0.5 V to 5.5 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:QFN-68 安裝風(fēng)格:SMD/SMT |
| CY8C29866-24AXIT | 功能描述:可編程片上系統(tǒng) - PSoC 32K 2K RAM 3.0-5.25V I2C, SPI, UART RoHS:否 制造商:Cypress Semiconductor 核心:8051 處理器系列:CY8C36 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:67 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:0.5 V to 5.5 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:QFN-68 安裝風(fēng)格:SMD/SMT |
| CY8C3244AXA-143 | 制造商:Cypress Semiconductor 功能描述:CY8C3244AXA-143 - Trays |
| CY8C3244AXA-146 | 制造商:Cypress Semiconductor 功能描述:CY8C3244AXA-146 - Trays |
| CY8C3244AXI-143 | 功能描述:IC MCU 8BIT 16KB FLASH 100TQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:PSOC® 3 CY8C32xx 標(biāo)準(zhǔn)包裝:60 系列:PSOC® 3 CY8C38xx 核心處理器:8051 芯體尺寸:8-位 速度:67MHz 連通性:EBI/EMI，I²C，LIN，SPI，UART/USART 外圍設(shè)備:電容感應(yīng)，DMA，LCD，POR，PWM，WDT 輸入/輸出數(shù):25 程序存儲(chǔ)器容量:64KB（64K x 8） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:2K x 8 RAM 容量:8K x 8 電壓 - 電源 (Vcc/Vdd):1.71 V ~ 5.5 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 2x20b，D/A 4x8b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFQFN 裸露焊盤 包裝:托盤 |
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