參數(shù)資料
型號: CY8C29466-24PVXIT
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: 外設(shè)及接口
英文描述: Mixed Signal Array
中文描述: MULTIFUNCTION PERIPHERAL, PDSO28
封裝: 0.210 INCH, LEAD FREE, SSOP-28
文件頁數(shù): 19/40頁
文件大?。?/td> 474K
代理商: CY8C29466-24PVXIT
August 3, 2004
Document No. 38-12013 Rev. *F
19
CY8C29x66 Preliminary Data Sheet
3. Electrical Specifications
3.3
DC Electrical Characteristics
3.3.1
DC Chip-Level Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40
°
C
T
A
85
°
C, or 3.0V to 3.6V and -40
°
C
T
A
85
°
C, respectively. Typical parameters apply to 5V and 3.3V at 25
°
C and
are for design guidance only.
3.3.2
DC General Purpose IO Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40
°
C
T
A
85
°
C, or 3.0V to 3.6V and -40
°
C
T
A
85
°
C, respectively. Typical parameters apply to 5V and 3.3V at 25
°
C and
are for design guidance only.
Table 3-4: DC Chip-Level Specifications
Symbol
Vdd
I
DD
Description
Min
Typ
Max
Units
Notes
Supply Voltage
Supply Current
3.00
8
5.25
14
V
mA
Conditions are 5.0V, T
A
= 25
o
C, CPU = 3 MHz,
48 MHz disabled. VC1 = 1.5 MHz, VC2 = 93.75
kHz, VC3 = 0.366 kHz.
Conditions are Vdd = 3.3V, T
A
= 25
o
C, CPU = 3
MHz, 48 MHz = Disabled, VC1 = 1.5 MHz, VC2
= 93.75 kHz, VC3 = 0.366 kHz.
Conditions are Vdd = 3.3V, T
A
= 25
o
C, CPU =
0.75 MHz, 48 MHz = Disabled, VC1 = 0.375
MHz, VC2 = 23.44 kHz, VC3 = 0.09 kHz.
Conditions are with internal slow speed oscilla-
tor, Vdd = 3.3V, -40
o
C
T
A
55
o
C.
Conditions are with internal slow speed oscilla-
tor, Vdd = 3.3V, 55
o
C < T
A
85
o
C.
Conditions are with properly loaded, 1
μ
W max,
32.768 kHz crystal. Vdd = 3.3V, -40
o
C
T
A
55
o
C.
Conditions are with properly loaded, 1
μ
W max,
32.768 kHz crystal. Vdd = 3.3V, 55
o
C < T
A
85
o
C.
Trimmed for appropriate Vdd.
I
DD3
Supply Current
5
9
mA
I
DDP
Supply current when IMO = 6 MHz using SLIMO mode.
2
3
mA
I
SB
Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,
and internal slow oscillator active.
3
10
μ
A
I
SBH
Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,
and internal slow oscillator active.
4
25
μ
A
I
SBXTL
Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,
internal slow oscillator, and 32 kHz crystal oscillator active.
4
12
μ
A
I
SBXTLH
Sleep (Mode) Current with POR, LVD, Sleep Timer, WDT,
and 32 kHz crystal oscillator active.
5
27
μ
A
V
REF
Reference Voltage (Bandgap)
1.28
1.3
1.32
V
Table 3-5: DC GPIO Specifications
Symbol
R
PU
R
PD
V
OH
Description
Min
Typ
Max
Units
k
k
V
Notes
Pull up Resistor
4
5.6
8
Pull down Resistor
4
5.6
8
High Output Level
Vdd - 1.0
IOH = 10 mA, Vdd = 4.75 to 5.25V (8 total loads,
4 on even port pins (for example, P0[2], P1[4]),
4 on odd port pins (for example, P0[3], P1[5])).
IOL = 25 mA, Vdd = 4.75 to 5.25V (8 total loads,
4 on even port pins (for example, P0[2], P1[4]),
4 on odd port pins (for example, P0[3], P1[5])).
Vdd = 3.0 to 5.25
V
OL
Low Output Level
0.75
V
V
IL
V
IH
V
H
I
IL
C
IN
C
OUT
Input Low Level
0.8
V
Input High Level
2.1
V
Vdd = 3.0 to 5.25
Input Hysterisis
60
mV
Input Leakage (Absolute Value)
1
nA
Gross tested to 1
μ
A.
Capacitive Load on Pins as Input
3.5
10
pF
Package and pin dependent. Temp = 25
o
C.
Package and pin dependent. Temp = 25
o
C.
Capacitive Load on Pins as Output
3.5
10
pF
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