參數(shù)資料
型號： CY8C27666-SPPXE
廠商： Cypress Semiconductor Corp.
英文描述： PSoC⑩ Mixed Signal Array
中文描述： ⑩的PSoC混合信號陣列
文件頁數(shù)： 20/39頁
文件大?。?/td> 610K
代理商： CY8C27666-SPPXE
June 1, 2004
Document No. 38-12019 Rev. *B
20
CY8C27x66 Preliminary Data Sheet
3. Electrical Specifications
3.3.5
DC Switch Mode Pump Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40
°
C
≤
T
A
≤
85
°
C, or 3.0V to 3.6V and -40
°
C
≤
T
A
≤
85
°
C, respectively. Typical parameters apply to 5V and 3.3V at 25
°
C and
are for design guidance only or unless otherwise specified.
Figure 3-2. Basic Switch Mode Pump Circuit
Table 3-10: DC Switch Mode Pump (SMP) Specifications
Symbol
Description
Min
Typ
Max
Units
Notes
V
PUMP
5V
5V Output voltage at Vdd from Pump
4.75
5.0
5.25
V
Average, neglecting ripple. Configuration with a 2
μ
H induc-
tor, 10
μ
F capacitor, and Schottky diode (see Figure 3-2).
SMP trip voltage is set to 5.00V.
Average, neglecting ripple. Configuration with a 2
μ
H induc-
tor, 10
μ
F capacitor, and Schottky diode (see Figure 3-2).
SMP trip voltage is set to 3.25V.
Configuration with a 2
μ
H inductor, 10
μ
F capacitor, and
Schottky diode (see Figure 3-2).
V
PUMP
3V
3V Output voltage at Vdd from Pump
3.00
3.25
3.60
V
I
PUMP
Available Output Current
V
BAT
= 1.5V, Vo= 3.25V
V
BAT
= 1.8V, Vo= 5.0V
8
5
–
–
–
–
mA
mA
V
BAT
5V
Input Voltage Range from Battery
1.8
–
5.0
V
Configuration with a 2
μ
H inductor, 10
μ
F capacitor, and
Schottky diode (see Figure 3-2). SMP trip voltage is set to
5.00V.
Configuration with a 2
μ
H inductor, 10
μ
F capacitor, and
Schottky diode (see Figure 3-2). SMP trip voltage is set to
3.25V.
Configuration with a 2
μ
H inductor, 10
μ
F capacitor, and
Schottky diode (see Figure 3-2).
Configuration with a 2
μ
H inductor, 10
μ
F capacitor, and
Schottky diode (see Figure 3-2).
Configuration with a 2
μ
H inductor, 10
μ
F capacitor, and
Schottky diode (see Figure 3-2).
Configuration with a 2
μ
H inductor, 10
μ
F capacitor, load is
5mA, and Schottky diode (see Figure 3-2).
Configuration with a 2
μ
H inductor, 10
μ
F capacitor, load is
5mA, and Schottky diode (see Figure 3-2). SMP trip voltage
is set to 3.25V.
Configuration with a 2
μ
H inductor, 10
μ
F capacitor, and
Schottky diode (see Figure 3-2).
Configuration with a 2
μ
H inductor, 10
μ
F capacitor, and
Schottky diode (see Figure 3-2).
V
BAT
3V
Input Voltage Range from Battery
1.0
–
3.3
V
V
BATSTART
Minimum Input Voltage from Battery to
Start Pump
1.1
–
–
V
V
PUMP_Line
Line Regulation (over V
BAT
range)
–
5
–
%V
O
V
PUMP_Load
Load Regulation
–
5
–
%V
O
V
PUMP_Ripple
Output Voltage Ripple (depends on cap/
load)
–
25
–
mVpp
–
Efficiency
35
50
–
%
F
PUMP
Switching Frequency
–
1.4
–
MHz
DC
PUMP
Switching Duty Cycle
–
50
–
%
Battery
C1
D1
+
PSoC
TM
Vdd
Vss
SMP
V
BAT
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CY8C28000-24PVXI 制造商:Cypress Semiconductor 功能描述:
CY8C28243-24PVXI 功能描述:可編程片上系統(tǒng) - PSoC PSoC Programmable System-on-Chip RoHS:否 制造商:Cypress Semiconductor 核心:8051 處理器系列:CY8C36 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:67 MHz 程序存儲器大小:32 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:0.5 V to 5.5 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:QFN-68 安裝風(fēng)格:SMD/SMT
CY8C28243-24PVXIT 功能描述:可編程片上系統(tǒng) - PSoC 16 I/O 16K FLASH 1K SRAM RoHS:否 制造商:Cypress Semiconductor 核心:8051 處理器系列:CY8C36 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:67 MHz 程序存儲器大小:32 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:0.5 V to 5.5 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:QFN-68 安裝風(fēng)格:SMD/SMT
CY8C28403-24PVXI 功能描述:可編程片上系統(tǒng) - PSoC PSoC Programmable System-on-Chip RoHS:否 制造商:Cypress Semiconductor 核心:8051 處理器系列:CY8C36 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:67 MHz 程序存儲器大小:32 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:0.5 V to 5.5 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:QFN-68 安裝風(fēng)格:SMD/SMT
CY8C28403-24PVXIT 功能描述:可編程片上系統(tǒng) - PSoC PSoC Programmable System-on-Chip RoHS:否 制造商:Cypress Semiconductor 核心:8051 處理器系列:CY8C36 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:67 MHz 程序存儲器大小:32 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:0.5 V to 5.5 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:QFN-68 安裝風(fēng)格:SMD/SMT
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