參數(shù)資料
型號: CY7C433
廠商: Cypress Semiconductor Corp.
英文描述: 4K x 9 Asynchronous FIFO(4K x 9 位異步先進先出(FIFO))
中文描述: 4K的× 9異步FIFO(4K的× 9位異步先進先出(FIFO)的)
文件頁數(shù): 11/25頁
文件大?。?/td> 483K
代理商: CY7C433
CY7C419/21/25/29/33
Document #: 38-06001 Rev. *B
Page 11 of 25
Architecture
The CY7C419, CY7C420/1, CY7C424/5, CY7C428/9,
CY7C432/3 FIFOs consist of an array of 256, 512, 1024, 2048,
4096 words of 9 bits each (implemented by an array of
dual-port RAM cells), a read pointer, a write pointer, control
signals (W, R, XI, XO, FL, RT, MR), and Full, Half Full, and
Empty flags.
Dual-Port RAM
The dual-port RAM architecture refers to the basic memory
cell used in the RAM. The cell itself enables the read and write
operations to be independent of each other, which is
necessary to achieve truly asynchronous operation of the
inputs and outputs. A second benefit is that the time required
to increment the read and write pointers is much less than the
time that would be required for data propagation through the
memory, which would be the case if the memory were imple-
mented using the conventional register array architecture.
Resetting the FIFO
Upon power-up, the FIFO must be reset with a Master Reset
(MR) cycle. This causes the FIFO to enter the empty condition
signified by the Empty flag (EF) being LOW, and both the Half
Full (HF) and Full flags (FF) being HIGH. Read (R) and write
(W) must be HIGH t
RPW
/t
WPW
before and t
RMR
after the rising
edge of MR for a valid reset cycle. If reading from the FIFO
after a reset cycle is attempted, the outputs will all be in the
high-impedance state.
Writing Data to the FIFO
The availability of at least one empty location is indicated by a
HIGH FF. The falling edge of W initiates a write cycle. Data
appearing at the inputs (D
0
–D
8
) t
SD
before and t
HD
after the
rising edge of W will be stored sequentially in the FIFO.
The EF LOW-to-HIGH transition occurs t
WEF
after the first
LOW-to-HIGH transition of W for an empty FIFO. HF goes
LOW t
WHF
after the falling edge of W following the FIFO
actually being Half Full. Therefore, the HF is active once the
Expansion Timing Diagrams
Note:
15.Expansion Out of device 1 (XO
1
) is connected to Expansion In of device 2 (XI
2
).
Switching Waveforms
(continued)
R
W
XO
1
(XI
2
)
D
0
–D
8
DATA VALID
DATA
VALID
DATA
VALID
t
XOL
t
XOH
t
HD
t
SD
t
SD
t
HD
t
XOL
t
LZR
t
A
t
DVR
t
XOH
t
A
t
DVR
t
HZR
XO
1
(XI
2
)
Q
0
–Q
8
WRITE TO LAST PHYSICAL
LOCATION OF DEVICE 1
WRITE TO FIRST PHYSICAL
LOCATION OF DEVICE 2
READ FROM LAST PHYSICAL
LOCATION OF DEVICE 1
READ FROM FIRST PHYSICAL
LOCATION OF DEVICE 2
t
WR
t
RR
DATA VALID
[15]
[15]
相關(guān)PDF資料
PDF描述
CY7C43632 512 x36 x2 Bidirectional Synchronous FIFO(512 x36 x2 雙向同步先進先出)
CY7C43622 256 x36 x2 Bidirectional Synchronous FIFO(256 x36 x2 雙向同步先進先出)
CY7C43682 16K x36 x2 Bidirectional Synchronous FIFO(16K x36 x2 雙向同步先進先出)
CY7C43633 512 x36 Unidirectional Synchronous FIFO w/ Bus Matching(512 x36 單向同步先進先出帶總線匹配)
CY7C43623 256 x36 Unidirectional Synchronous FIFO w/ Bus Matching(256 x36 單向同步先進先出帶總線匹配)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C433-10AC 制造商:Cypress Semiconductor 功能描述:
CY7C433-10AXC 功能描述:IC ASYNC FIFO MEM 4KX9 32-TQFP RoHS:是 類別:集成電路 (IC) >> 邏輯 - FIFO 系列:CY7C 標準包裝:15 系列:74F 功能:異步 存儲容量:256(64 x 4) 數(shù)據(jù)速率:- 訪問時間:- 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 安裝類型:通孔 封裝/外殼:24-DIP(0.300",7.62mm) 供應(yīng)商設(shè)備封裝:24-PDIP 包裝:管件 其它名稱:74F433
CY7C433-10JXC 功能描述:先進先出 4Kx9 .300" PARALLEL CASCADEABLE 先進先出 COM RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲容量:4 Mbit 定時類型:Synchronous 組織:256 K x 18 最大時鐘頻率:100 MHz 訪問時間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
CY7C433-10JXCT 功能描述:先進先出 4Kx9 .300" PARALLEL CASCADEABLE 先進先出 COM RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲容量:4 Mbit 定時類型:Synchronous 組織:256 K x 18 最大時鐘頻率:100 MHz 訪問時間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
CY7C433-15JC 制造商:Cypress Semiconductor 功能描述:FIFO Mem Async Dual Depth/Width Uni-Dir 4K x 9 32-Pin PLCC