參數(shù)資料
型號: CY7C199L-20PC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 32K x 8 Static RAM
中文描述: 32K X 8 STANDARD SRAM, 20 ns, PDIP28
封裝: 0.300 INCH, PLASTIC, DIP-28
文件頁數(shù): 5/13頁
文件大?。?/td> 317K
代理商: CY7C199L-20PC
CY7C199
Document #: 38-05160 Rev. *A
Page 5 of 13
t
PD
Write Cycle
[10,11]
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
HZWE
t
LZWE
CE HIGH to Power-down
20
20
20
25
ns
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE LOW to High-Z
[9]
WE HIGH to Low-Z
[8]
20
15
15
0
0
15
10
0
25
18
20
0
0
18
10
0
35
22
30
0
0
22
15
0
45
22
40
0
0
22
15
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
11
15
15
3
3
3
3
Switching Characteristics
Over the Operating Range (-20, -25, -35, -45)
[3, 7]
Parameter
Description
7C199-20
Min.
7C199-25
Min.
7C199-35
Min.
7C199-45
Min.
Unit
Max.
Max.
Max.
Max.
Switching Waveforms
Read Cycle No. 1
[12, 13]
Read Cycle No. 2
[13, 14]
Notes:
12. Device is continuously selected. OE, CE = V
IL
.
13. WE is HIGH for read cycle.
14. Address valid prior to or coincident with CE transition LOW.
ADDRESS
DATA OUT
PREVIOUS DATA VALID
DATA VALID
t
RC
t
AA
t
OHA
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
DATA OUT
HIGH IMPEDANCE
IMPEDANCE
ICC
ISB
t
HZOE
t
HZCE
t
PD
OE
CE
HIGH
V
SUPPLY
CURRENT
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