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參數(shù)資料
| 型號： | CY7C194B |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 256 Kb (64K x 4) Static RAM |
| 中文描述： | 256 KB的（64K的× 4）靜態(tài)RAM |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 256K |
| 代理商： | CY7C194B |
CY7C194B
CY7C195B
Document #: 38-05409 Rev. *A
Page 7 of 13
AC Electrical Characteristics
2
6 7 8
Parameter
t
RC
t
AA
t
OHA
Description
12 ns
15 ns
25 ns
Unit
ns
ns
ns
Min
12
–
3
Max
–
12
–
Min
15
–
3
Max
–
15
–
Min
25
–
3
Max
–
25
–
Read Cycle Time
Address to Data Valid
Data Hold from Address
Change
CE to Data Valid
OE to Data Valid
OE to Low Z
OE to High Z
CE to Low Z
CE to High Z
CE to Power-up
CE to Power-down
Write Cycle Time
CE to Write End
Address Set-up to Write End
Address Hold from Write
End
Address Set-up to Write
Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
WC
t
SCE
t
AW
t
HA
–
–
0
–
3
–
0
–
12
9
9
0
12
6
–
5
–
5
–
12
–
–
–
–
–
–
0
–
3
–
0
–
15
10
10
0
15
7
–
7
–
7
–
15
–
–
–
–
–
–
0
–
3
–
0
–
25
18
20
0
25
10
–
10
–
10
–
25
–
–
–
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
SA
0
–
0
–
0
–
ns
t
PWE
t
SD
t
HD
t
HZWE
t
LZWE
8
7
0
–
3
–
–
–
6
–
9
8
0
–
3
–
–
–
7
–
18
10
0
-
3
–
–
–
10
–
ns
ns
ns
ns
ns
Notes:
6. At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
7. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the
transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal
that terminates the write.
8. t
HZOE
, t
HZCE
, t
HZWE
are specified as in part (b) of the A/C Test Loads. Transitions are measured ± 200 mV from steady state voltage
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| CY7C194B-15PC | 256 Kb (64K x 4) Static RAM |
| CY7C194B-15VC | 256 Kb (64K x 4) Static RAM |
| CY7C194B-25VC | 256 Kb (64K x 4) Static RAM |
| CY7C195B | 256 Kb (64K x 4) Static RAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C194B15PC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C194B25VC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C194B-25VC | 制造商:Rochester Electronics LLC 功能描述:256K (64K X 4)- FAST ASYNCH SRAM - Bulk |
| CY7C194B-25VCT | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C194BN-15PC | 功能描述:64KX4 24-PIN 300 MIL SRAM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應商設備封裝:8-MFP 包裝:帶卷 (TR) |
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