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參數(shù)資料
| 型號： | CY7C194B-15PC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 256 Kb (64K x 4) Static RAM |
| 中文描述： | 64K X 4 STANDARD SRAM, 15 ns, PDIP24 |
| 封裝： | 6.60 X 31.80 MM, 3.50 MM HEIGHT, PLASTIC, DIP-24 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 256K |
| 代理商： | CY7C194B-15PC |
CY7C194B
CY7C195B
Document #: 38-05409 Rev. *A
Page 5 of 13
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Operating Range
DC Electrical Characteristics
3
Capacitance
4
Parameter
T
STG
T
AMB
V
CC
V
CC
I
OUT
V
ESD
I
LU
Description
Value
Unit
°C
°C
V
V
mA
V
mA
Storage Temperature
Ambient Temperature with Power Applied (i.e. case temperature)
Core Supply Voltage Relative to V
SS
DC Voltage Applied to any Pin Relative to V
SS
Output Short-Circuit Current
Static Discharge Voltage (per MIL-STD-883, Method 3015)
Latch-up Current
–65 to +150
–55 to +125
–0.5 to +7.0
–0.5 to V
CC
+ null
20
> 2001
> 200
Range
Commercial
Ambient Temperature (T
A
)
0°C to 70°C
Voltage Range (V
CC
)
5.0V ± 10%
Parameter
V
IH
Description
Input HIGH Volt-
age
Input LOW Volt-
age
Output HIGH Volt-
age
Output LOW Volt-
age
V
CC
Operating
Supply Current
Automatic CE
Power-down Cur-
rent TTL Inputs
Automatic CE
Power-down Cur-
rent CMOS Inputs
Output Leakage
Current
Input Load Cur-
rent
Condition
12 ns
15 ns
25 ns
Unit
V
Min
2.2
Max
V
CC
+
0.3
0.8
Min
2.2
Max
V
CC
+
0.3
0.8
Min
2.2
Max
V
CC
+
0.3
0.8
V
IL
–0.3
–0.3
–0.5
V
V
OH
V
CC
= Min., loh = -4.0 ma
2.4
–
2.4
–
2.4
–
V
V
OL
V
CC
= Min., lol = 8.0 ma
–
0.4
–
0.4
–
0.4
V
I
CC
V
CC
= Max., I
OUT
= 0 mA, f =
F
MAX
= 1 / t
RC
V
CC
= Max., CE
≥
V
IH
, V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = F
MAX
–
90
–
80
–
80
mA
I
SB1
–
30
–
30
–
30
mA
I
SB2
V
CC
= Max., CE
≥
V
CC
- 0.3v,
V
IN
> V
CC
- 0.3v or V
IN
≤
0.3,f
= 0 Commercial
GND
≤
Vi
≤
V
CC
, Output Dis-
abled
GND
≤
Vi
≤
V
CC
–
10
–
10
–
10
mA
I
OZ
–5
+5
–5
+5
–5
+5
uA
I
IX
–5
+5
–5
+5
–5
+5
uA
Notes:
3. V
IL
(min) = –2.0V for pulse durations of less than 20 ns.
4. Tested initially and after any design or process change that may affect these parameters.
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Conditions
T
A
= 25C, f = 1 MHz,
V
CC
= 5.0V
Max
Unit
pF
ALL - PACKAGES
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| CY7C195B | 256 Kb (64K x 4) Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C194B25VC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C194B-25VC | 制造商:Rochester Electronics LLC 功能描述:256K (64K X 4)- FAST ASYNCH SRAM - Bulk |
| CY7C194B-25VCT | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C194BN-15PC | 功能描述:64KX4 24-PIN 300 MIL SRAM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| CY7C194BN-15VC | 功能描述:64KX4 24-PIN 300 MIL SRAM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
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