參數(shù)資料
型號(hào): CY7C1527V18-200BZXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit DDR-II SRAM 2-Word Burst Architecture
中文描述: 8M X 9 DDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁數(shù): 26/28頁
文件大?。?/td> 457K
代理商: CY7C1527V18-200BZXC
CY7C1516V18
CY7C1527V18
CY7C1518V18
CY7C1520V18
Document #: 38-05563 Rev. *D
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51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
278
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
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51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
300
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Commercial
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
Ordering Information
(continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit
www.cypress.com
for actual products offered
Speed
(MHz)
Ordering Code
Diagram
Package
Package Type
Operating
Range
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相關(guān)PDF資料
PDF描述
CY7C1516V18-300BZI 72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1516V18-300BZXC 72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1516V18-300BZXI 72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518V18-167BZC 72-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1518V18-167BZI 72-Mbit DDR-II SRAM 2-Word Burst Architecture
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CY7C1543KV18-450BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb x 18 450 MHz RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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