參數(shù)資料
型號(hào)： CY7C1524AV18-300BZC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
中文描述： 2M X 36 DDR SRAM, 0.45 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁(yè)數(shù)： 26/28頁(yè)
文件大?。?/td> 1133K
代理商： CY7C1524AV18-300BZC
PRELIMINARY
CY7C1522AV18
CY7C1529AV18
CY7C1523AV18
CY7C1524AV18
Document #: 001-06981 Rev. *B
Page 26 of 28
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CY7C1522AV18-250BZI
CY7C1529AV18-250BZI
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CY7C1524AV18-250BZI
CY7C1522AV18-250BZXI
CY7C1529AV18-250BZXI
CY7C1523AV18-250BZXI
CY7C1524AV18-250BZXI
CY7C1522AV18-200BZC
CY7C1529AV18-200BZC
CY7C1523AV18-200BZC
CY7C1524AV18-200BZC
CY7C1522AV18-200BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free Commercial
CY7C1529AV18-200BZXC
CY7C1523AV18-200BZXC
CY7C1524AV18-200BZXC
CY7C1522AV18-200BZI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1529AV18-200BZI
CY7C1523AV18-200BZI
CY7C1524AV18-200BZI
CY7C1522AV18-200BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1529AV18-200BZXI
CY7C1523AV18-200BZXI
CY7C1524AV18-200BZXI
CY7C1522AV18-167BZC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1529AV18-167BZC
CY7C1523AV18-167BZC
CY7C1524AV18-167BZC
CY7C1522AV18-167BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free Commercial
CY7C1529AV18-167BZXC
CY7C1523AV18-167BZXC
CY7C1524AV18-167BZXC
CY7C1522AV18-167BZI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1529AV18-167BZI
CY7C1523AV18-167BZI
CY7C1524AV18-167BZI
CY7C1522AV18-167BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1529AV18-167BZXI
CY7C1523AV18-167BZXI
CY7C1524AV18-167BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
250
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
Industrial
200
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Commercial
200
200
Industrial
200
Industrial
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Commercial
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167
Industrial
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Industrial
Ordering Information
(continued)
“Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit
www.cypress.com
for actual products offered”.
Speed
(MHz)
Ordering Code
Diagram
Package
Package Type
Operating
Range
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相關(guān)PDF資料
PDF描述
CY7C1524AV18-300BZI 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1524AV18-300BZXC 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1524AV18-300BZXI 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1523V18 RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
CY7C1392BV18 RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1525JV18250BZC 制造商:Cypress Semiconductor 功能描述:
CY7C1525JV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8M x 9 1.8V QDR-II 靜態(tài)隨機(jī)存取存儲(chǔ)器 Two-Word Burst RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1525JV18-250BZCES 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1525JV18-250BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8M x 9 1.8V QDR-II 靜態(tài)隨機(jī)存取存儲(chǔ)器 Two-Word Burst RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1525KV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 72MB (8Mx9) 1.8v 250MHz QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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