參數(shù)資料
型號(hào)： CY7C1524AV18-250BZI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
中文描述： 2M X 36 DDR SRAM, 0.45 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁(yè)數(shù)： 17/28頁(yè)
文件大?。?/td> 1133K
代理商： CY7C1524AV18-250BZI
PRELIMINARY
CY7C1522AV18
CY7C1529AV18
CY7C1523AV18
CY7C1524AV18
Document #: 001-06981 Rev. *B
Page 17 of 28
Identification Register Definitions
Instruction Field
Revision Number
(31:29)
Cypress Device
ID (28:12)
Cypress JEDEC
ID (11:1)
Value
Description
Version number.
CY7C1522AV18
001
CY7C1529AV18
001
CY7C1523AV18
001
CY7C1524AV18
001
11010100010000100
11010100010001100
11010100010010100 11010100010100100 Defines the type
of SRAM.
Allows unique
identification of
SRAM vendor.
Indicate the
presence of an
ID register.
00000110100
00000110100
00000110100
00000110100
ID Register
Presence (0)
1
1
1
1
Scan Register Sizes
Register Name
Instruction
Bypass
ID
Boundary Scan
Bit Size
3
1
32
109
Instruction Codes
Instruction
EXTEST
IDCODE
Code
000
001
Description
Captures the Input/Output ring contents.
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
Captures the Input/Output contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
Do Not Use: This instruction is reserved for future use.
Captures the Input/Output ring contents. Places the boundary scan register between TDI and
TDO. Does not affect the SRAM operation.
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
SAMPLE Z
010
RESERVED
SAMPLE/PRELOAD
011
100
RESERVED
RESERVED
BYPASS
101
110
111
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1524AV18-250BZXC 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1524AV18-250BZXI 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1524AV18-278BZC 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1524AV18-278BZI 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1524AV18-278BZXC 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1525JV18250BZC 制造商:Cypress Semiconductor 功能描述:
CY7C1525JV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8M x 9 1.8V QDR-II 靜態(tài)隨機(jī)存取存儲(chǔ)器 Two-Word Burst RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1525JV18-250BZCES 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1525JV18-250BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8M x 9 1.8V QDR-II 靜態(tài)隨機(jī)存取存儲(chǔ)器 Two-Word Burst RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1525KV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 72MB (8Mx9) 1.8v 250MHz QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*