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參數(shù)資料
| 型號(hào)： | CY7C1524AV18-167BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
| 中文描述： | 2M X 36 DDR SRAM, 0.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 20/28頁 |
| 文件大?。?/td> | 1133K |
| 代理商： | CY7C1524AV18-167BZC |
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PRELIMINARY
CY7C1522AV18
CY7C1529AV18
CY7C1523AV18
CY7C1524AV18
Document #: 001-06981 Rev. *B
Page 20 of 28
Maximum Ratings
(Above which the useful life may be impaired.)
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with Power Applied...–10°C to + 85°C
Supply Voltage on V
DD
Relative to GND.......–0.5V to + 2.9V
Supply Voltage on V
DDQ
Relative to GND .....–0.5V to + V
DD
DC Voltage Applied to Outputs
in High-Z State.................................... –0.5V to V
DDQ
+ 0.3V
DC Input Voltage
[15]
...............................–0.5V to V
DD
+ 0.3V
Current into Outputs (LOW).........................................20 mA
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Com’l
Ind’l
Ambient
Temperature
0°C to +70°C
–40°C to +85°C
V
DD
[16]
1.8
±
0.1V
V
DDQ
[16]
1.4V to V
DD
Electrical Characteristics
Over the Operating Range
[17]
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
V
DD
Power Supply Voltage
V
DDQ
I/O Supply Voltage
V
OH
Output HIGH Voltage
V
OL
Output LOW Voltage
V
OH(LOW)
Output HIGH Voltage
V
OL(LOW)
Output LOW Voltage
V
IH
V
IL
I
X
Input Leakage Current
I
OZ
Output Leakage Current
V
REF
I
DD
V
DD
Operating Supply (x36) V
DD
= Max.,I
OUT
= 0 mA,
Test Conditions
Min.
1.7
1.4
Typ.
1.8
1.5
Max.
1.9
V
DD
Unit
V
V
V
V
V
V
V
V
μ
A
μ
A
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note 18
Note 19
I
OH
=
0.1 mA, Nominal Impedance
I
OL
= 0.1 mA, Nominal Impedance
V
DDQ
/2 – 0.12
V
DDQ
/2 – 0.12
V
DDQ
– 0.2
V
SS
V
REF
+ 0.1
–0.3
–5
–5
0.68
V
DDQ
/2 + 0.12
V
DDQ
/2 + 0.12
V
DDQ
0.2
V
DDQ
+ 0.3
V
REF
– 0.1
5
5
0.95
650
700
800
855
900
340
360
380
392
400
Input HIGH Voltage
[15]
Input LOW Voltage
[15]
GND
≤
V
I
≤
V
DDQ
GND
≤
V
I
≤
V
DDQ,
Output Disabled
Input Reference Voltage
[20]
Typical Value = 0.75V
0.75
f = f
MAX
= 1/t
CYC
167 MHz
200 MHz
250 MHz
278 MHz
300 MHz
167 MHz
200 MHz
250 MHz
278 MHz
300 MHz
I
SB1
Automatic
Power-down
Current
Max. V
DD
, Both Ports
Deselected, V
IN
≥
V
IH
or
V
IN
≤
V
IL
,f = f
MAX
=
1/t
CYC
,
Inputs Static
AC Input Requirements
Over the Operating Range
Parameter
Description
V
IH
Input HIGH Voltage
V
IL
Input LOW Voltage
Notes:
15.Overshoot: V
(AC) < V
+ 0.85V (Pulse width less than t
/2); Undershoot V
(AC) > –1.5V (Pulse width less than t
TCYC/
2).
16.Power-up: Assumes a linear ramp from 0V to V
DD
(Min.,) within 200ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
17.All voltages referenced to ground.
18.Outputs are impedance controlled. I
OH
= –(V
DDQ
/2)/(RQ/5) for values of 175
<
RQ < 350
.
19.Outputs are impedance controlled. I
= (V
/2)/(RQ/5) for values of 175
< RQ < 350
.
20.V
(Min.) = 0.68V or 0.46V
, whichever is larger, V
(Max.) = 0.95V or 0.54V
, whichever is smaller.
21.Tested initially and after any design or process change that may affect these parameters.
Test Conditions
Min.
Typ.
–
–
Max.
–
Unit
V
V
V
REF
+ 0.2
–
V
REF
– 0.2
[+] Feedback
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