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參數(shù)資料
| 型號： | CY7C1522JV18-250BZI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 8M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 1/27頁 |
| 文件大?。?/td> | 658K |
| 代理商： | CY7C1522JV18-250BZI |
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72-Mbit DDR-II SIO SRAM 2-Word
Burst Architecture
CY7C1522JV18, CY7C1529JV18
CY7C1523JV18, CY7C1524JV18
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document #: 001-44700 Rev. *B
Revised July 31, 2009
Features
■ 72 Mbit Density (8M x 8, 8M x 9, 4M x 18, 2M x 36)
■ 300 MHz Clock for High Bandwidth
■ 2-word Burst for reducing Address Bus Frequency
■ Double Data Rate (DDR) Interfaces
(data transferred at 600 MHz) at 300 MHz
■ Two Input Clocks (K and K) for precise DDR timing
SRAM uses rising edges only
■ Two Input Clocks for output data (C and C) to minimize Clock
Skew and Flight Time mismatches
■ Echo Clocks (CQ and CQ) Simplify Data Capture in High Speed
Systems
■ Synchronous Internally Self-timed Writes
■ DDR-II operates with 1.5 Cycle Read Latency when the Delay
Lock Loop (DLL) is enabled
■ Operates similar to a DDR-I device with 1 Cycle Read Latency
in DLL Off Mode
■ 1.8V Core Power Supply with HSTL inputs and outputs
■ Variable drive HSTL Output Buffers
■ Expanded HSTL Output Voltage (1.4V–VDD)
■ Available in 165-Ball FBGA Package (15 x 17 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ JTAG 1149.1 Compatible Test Access Port
■ Delay Lock Loop (DLL) for Accurate Data Placement
Configurations
CY7C1522JV18 – 8M x 8
CY7C1529JV18 – 8M x 9
CY7C1523JV18 – 4M x 18
CY7C1524JV18 – 2M x 36
Functional Description
The CY7C1522JV18, CY7C1529JV18, CY7C1523JV18, and
CY7C1524JV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with Double Data Rate Separate I/O (DDR-II SIO)
architecture. The DDR-II SIO consists of two separate ports: the
read port and the write port to access the memory array. The
read port has data outputs to support read operations and the
write port has data inputs to support write operations. The DDR-II
SIO has separate data inputs and data outputs to eliminate the
need to ‘turnaround’ the data bus required with common I/O
devices. Access to each port is accomplished through a common
address bus. Addresses for read and write are latched on
alternate rising edges of the input (K) clock. Write data is regis-
tered on the rising edges of both K and K. Read data is driven on
the rising edges of C and C if provided, or on the rising edge of
K and K if C/C are not provided. Each address location is
associated with two 8-bit words in the case of CY7C1522JV18,
two 9-bit words in the case of CY7C1529JV18, two 18-bit words
in the case of CY7C1523JV18, and two 36-bit words in the case
of CY7C1524JV18 that burst sequentially into or out of the
device.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs are tightly matched to the
two output echo clocks CQ/CQ, eliminating the need to capture
data separately from each individual DDR-II SIO SRAM in the
system design. Output data clocks (C/C) enable maximum
system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
Description
300 MHz
250 MHz
Unit
Maximum Operating Frequency
300
250
MHz
Maximum Operating Current
x8
900
800
mA
x9
900
800
x18
950
800
x36
1080
900
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1524KV18-333BZI | 2M X 36 DDR SRAM, 0.45 ns, PBGA165 |
| CY7C1612KV18-333BZXC | 8M X 18 QDR SRAM, PBGA165 |
| CY7C256-45PC | 32K X 8 OTPROM, 45 ns, PDIP28 |
| CY7C2561KV18-450BZC | 8M X 8 QDR SRAM, 0.37 ns, PBGA165 |
| CY7C2566KV18-450BZI | 8M X 8 DDR SRAM, 0.37 ns, PBGA165 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1523AV18-200BZC | 功能描述:靜態(tài)隨機存取存儲器 4M x 18 1.8V DDR II SIO 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1523AV18-250BZC | 功能描述:靜態(tài)隨機存取存儲器 4M x 18 1.8V DDR II SIO 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1523JV18-300BZXC | 功能描述:靜態(tài)隨機存取存儲器 4Mbx18 72Mb 1.7-1.9V 300 MHz 2 WORD BURST RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1523KV18-250BZ | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1523KV18-250BZXC | 功能描述:靜態(tài)隨機存取存儲器 72MB (4Mx18) 1.8v 250MHz DDR II 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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