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參數(shù)資料
| 型號(hào)： | CY7C1516V18-167BZI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit DDR-II SRAM 2-Word Burst Architecture |
| 中文描述： | 8M X 8 DDR SRAM, 0.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 20/28頁 |
| 文件大?。?/td> | 457K |
| 代理商： | CY7C1516V18-167BZI |
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CY7C1516V18
CY7C1527V18
CY7C1518V18
CY7C1520V18
Document #: 38-05563 Rev. *D
Page 20 of 28
Maximum Ratings
(Above which the useful life may be impaired.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with Power Applied..–55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.5V to +2.9V
Supply Voltage on V
DDQ
Relative to GND ......–0.5V to +V
DD
DC Applied to Outputs in High-Z......... –0.5V to V
DDQ
+ 0.3V
DC Input Voltage
[16]
...............................–0.5V to V
DD
+ 0.3V
Electrical Characteristics
Over the Operating Range
[18]
DC Electrical Characteristics
Over the Operating Range
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V
Latch-up Current..................................................... >200 mA
Operating Range
Range
Com’l
Ind’l
Ambient
Temperature
0°C to +70°C
–40°C to +85°C
V
DD
[17]
1.8 ± 0.1V
V
DDQ
[17]
1.4V to V
DD
Parameter
V
DD
V
DDQ
V
OH
V
OL
V
OH(LOW)
V
OL(LOW)
V
IH
V
IL
I
X
I
OZ
V
REF
I
DD
Description
Test Conditions
Min.
1.7
1.4
Typ.
1.8
1.5
Max.
1.9
V
DD
Unit
V
V
V
V
V
V
V
V
μ
A
μ
A
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
[16]
Input LOW Voltage
[16]
Input Leakage Current
Output Leakage Current
Input Reference Voltage
[21]
V
DD
Operating Supply
Note 19
Note 19
I
OH
= –0.1 mA, Nominal Impedance
I
OL
= 0.1 mA, Nominal Impedance
V
DDQ
/2 – 0.12
V
DDQ
/2 – 0.12
V
DDQ
– 0.2
V
SS
V
+ 0.1
–0.3
–5
–5
0.68
V
DDQ
/2 + 0.12
V
DDQ
/2 + 0.12
V
DDQ
0.2
V
DDQ
+ 0.3
V
REF
– 0.1
5
5
0.95
650
700
800
860
900
340
360
380
390
400
GND
≤
V
I
≤
V
DDQ
GND
≤
V
I
≤
V
DDQ,
Output Disabled
Typical Value = 0.75V
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
0.75
167 MHz
200 MHz
250 MHz
278 MHz
300 MHz
167 MHz
200 MHz
250 MHz
278 MHz
300 MHz
I
SB1
Automatic Power-down
Current
Max. V
DD
, Both Ports
Deselected, V
IN
≥
V
IH
or
V
IN
≤
V
IL
f = f
MAX
= 1/t
CYC
,
Inputs Static
AC Input Requirements
Over the Operating Range
Parameter
Description
V
IH
Input HIGH Voltage
V
IL
Input LOW Voltage
Test Conditions
Min.
Typ.
–
–
Max.
–
Unit
V
V
V
REF
+ 0.2
–
V
REF
– 0.2
Notes:
16.Overshoot: V
(AC) < V
+ 0.85V (Pulse width less than t
/2); Undershoot V
(AC) > -1.5V (Pulse width less than t
TCYC/
2).
17.Power-up: Assumes a linear ramp from 0V to V
DD
(Min.,) within 200ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
18.All voltages referenced to ground.
19.Outputs are impedance controlled. IOH = -(V
DDQ
/2)/(RQ/5) for values of 175
<
RQ < 350
.
20.Outputs are impedance controlled. I
= (V
/2)/(RQ/5) for values of 175
< RQ < 350
.
21.V
REF
(Min.) = 0.68V or 0.46V
DDQ
, whichever is larger, V
REF
(Max.) = 0.95V or 0.54V
DDQ
, whichever is smaller.
[+] Feedback
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| CY7C1518-250BZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1518AV18-167BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M x 18 1.8V DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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| CY7C1518AV18-250BZXI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M x 18 1.8V DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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