參數(shù)資料
型號(hào): CY7C1512V18-200BZI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類(lèi): DRAM
英文描述: 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
中文描述: 4M X 18 QDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁(yè)數(shù): 25/27頁(yè)
文件大?。?/td> 458K
代理商: CY7C1512V18-200BZI
CY7C1510V18
CY7C1525V18
CY7C1512V18
CY7C1514V18
Document #: 38-05489 Rev. *D
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51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
278
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Commercial
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
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300
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Commercial
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
Ordering Information
(continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit
www.cypress.com
for actual products offered.
Speed
(MHz)
Ordering Code
Diagram
Package
Package Type
Operating
Range
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相關(guān)PDF資料
PDF描述
CY7C1512V18-200BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-200BZXI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-250BZI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-250BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1512V18-250BZXI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1512V18-200BZIES 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 0.45NS 165FBGA - Bulk
CY7C1512V18-200BZX 制造商:Cypress Semiconductor 功能描述:
CY7C1512V18-200BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx18 72M QDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1512V18-200BZXCKU 制造商:Cypress Semiconductor 功能描述:
CY7C1512V18-200BZXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mx18 72M QDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray