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參數(shù)資料
| 型號： | CY7C1471V25-133BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| 中文描述： | 2M X 36 ZBT SRAM, 6.5 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, FBGA-165 |
| 文件頁數(shù)： | 15/30頁 |
| 文件大小： | 373K |
| 代理商： | CY7C1471V25-133BZC |
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PRELIMINARY
CY7C1471V25
CY7C1473V25
CY7C1475V25
Document #: 38-05287 Rev. *E
Page 15 of 30
possible to capture all other signals and simply ignore the
value of the CLK captured in the boundary scan register.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO balls.
Note that since the PRELOAD part of the command is not
implemented, putting the TAP to the Update-DR state while
performing a SAMPLE/PRELOAD instruction will have the
same effect as the Pause-DR command.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO balls. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
tTL
Test Clock
(TCK)
1
2
3
4
5
6
Test Mode Select
(TMS)
tTH
Test Data-Out
(TDO)
tCYC
Test Data-In
(TDI)
tTMSH
tTMSS
tTDIH
tTDIS
tTDOX
tTDOV
DON’T CARE
UNDEFINED
TAP AC Switching Characteristics
Over the Operating Range
[10, 11]
Parameter
Clock
t
TCYC
t
TF
t
TH
t
TL
Output Times
t
TDOV
t
TDOX
Set-up Times
t
TMSS
t
TDIS
t
CS
Hold Times
t
TMSH
t
TDIH
t
CH
Notes:
10.t
and t
refer to the set-up and hold time requirements of latching data from the boundary scan register.
11.Test conditions are specified using the load in TAP AC Test Conditions. t
R
/t
F
= 1 ns.
Description
Min.
Max.
Unit
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH time
TCK Clock LOW time
50
ns
MHz
ns
ns
20
25
25
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
5
ns
ns
0
TMS Set-up to TCK Clock Rise
TDI Set-up to TCK Clock Rise
Capture Set-up to TCK Rise
5
5
5
ns
ns
ns
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
5
5
5
ns
ns
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1473V25-100AXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| CY7C1473V25-100BZC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| CY7C1473V25-100BZXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| CY7C1475V25-100BGC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
| CY7C1475V25-100BGXC | 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1471V33-100AC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 3.3V 72MBIT 2MX36 8.5NS 100TQFP - Bulk |
| CY7C1471V33-100AXI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1471V33-117AXC | 功能描述:靜態(tài)隨機(jī)存取存儲器 2Mx36 3.3V NoBL FT 靜態(tài)隨機(jī)存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1471V33-117AXCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 72MBIT 2MX36 8.5NS 100TQFP - Bulk |
| CY7C1471V33-133AC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 72MBIT 2MX36 6.5NS 100TQFP - Bulk |
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