參數(shù)資料
型號(hào)： CY7C1418BV18-167BZC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 36-Mbit DDR-II SRAM 2-Word Burst Architecture
中文描述： 2M X 18 DDR SRAM, 0.5 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁(yè)數(shù)： 27/28頁(yè)
文件大小： 1132K
代理商： CY7C1418BV18-167BZC
PRELIMINARY
CY7C1416BV18
CY7C1427BV18
CY7C1418BV18
CY7C1420BV18
Document Number: 001-07033 Rev. *B
Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Page 27 of 28
QDR
SRAMs and Quad Data Rate
SRAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas
and Samsung. All product and company names mentioned in this document are the trademarks of their respective holders.
Package Diagram
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165-ball FBGA (15 x 17 x 1.40 mm) (51-85195)
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相關(guān)PDF資料
PDF描述
CY7C1418BV18-167BZI 36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1418BV18-167BZXC 36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1418BV18-167BZXI 36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1418BV18-200BZC 36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1418BV18-200BZI 36-Mbit DDR-II SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1418BV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 DDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1418BV18-250BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 DDR-II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1418BV18-250BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 DDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1418BV18-267BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 DDR-II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1418JV18-300BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 DDR II Burst 2 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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