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參數資料
| 型號： | CY7C1416BV18-300BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 36-Mbit DDR-II SRAM 2-Word Burst Architecture |
| 中文描述： | 4M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數： | 27/28頁 |
| 文件大?。?/td> | 1132K |
| 代理商： | CY7C1416BV18-300BZXC |
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PRELIMINARY
CY7C1416BV18
CY7C1427BV18
CY7C1418BV18
CY7C1420BV18
Document Number: 001-07033 Rev. *B
Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Page 27 of 28
QDR
SRAMs and Quad Data Rate
SRAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas
and Samsung. All product and company names mentioned in this document are the trademarks of their respective holders.
Package Diagram
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[+] Feedback
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1416BV18-300BZXI | 36-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1418BV18 | 36-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1418BV18-167BZC | 36-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1418BV18-167BZI | 36-Mbit DDR-II SRAM 2-Word Burst Architecture |
| CY7C1418BV18-167BZXC | 36-Mbit DDR-II SRAM 2-Word Burst Architecture |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C1418AV18-167BZC | 功能描述:靜態(tài)隨機存取存儲器 2Mx18 DDR II Burst 2 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1418AV18-167BZCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 1.8V 36MBIT 2MX18 0.5NS 165FBGA - Bulk |
| CY7C1418AV18-167BZXC | 功能描述:靜態(tài)隨機存取存儲器 2Mx18 DDR II Burst 2 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1418AV18-200BZCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 1.8V 36MBIT 2MX18 0.45NS 165FBGA - Bulk |
| CY7C1418AV18-200BZXC | 功能描述:靜態(tài)隨機存取存儲器 2Mx18 DDR II Burst 2 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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