參數(shù)資料
型號： CY7C1415AV18-250BZXC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
中文描述： 1M X 36 QDR SRAM, 0.45 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁數(shù)： 25/28頁
文件大?。?/td> 1143K
代理商： CY7C1415AV18-250BZXC
CY7C1411AV18
CY7C1426AV18
CY7C1413AV18
CY7C1415AV18
Document Number: 38-05614 Rev. *C
Page 25 of 28
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit
www.cypress.com
for actual products offered.
Speed
(MHz)
Ordering Code
Diagram
167
CY7C1411AV18-167BZC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1426AV18-167BZC
CY7C1413AV18-167BZC
CY7C1415AV18-167BZC
CY7C1411AV18-167BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1426AV18-167BZXC
CY7C1413AV18-167BZXC
CY7C1415AV18-167BZXC
CY7C1411AV18-167BZI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1426AV18-167BZI
CY7C1413AV18-167BZI
CY7C1415AV18-167BZI
CY7C1411AV18-167BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1426AV18-167BZXI
CY7C1413AV18-167BZXI
CY7C1415AV18-167BZXI
200
CY7C1411AV18-200BZC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1426AV18-200BZC
CY7C1413AV18-200BZC
CY7C1415AV18-200BZC
CY7C1411AV18-200BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1426AV18-200BZXC
CY7C1413AV18-200BZXC
CY7C1415AV18-200BZXC
CY7C1411AV18-200BZI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1426AV18-200BZI
CY7C1413AV18-200BZI
CY7C1415AV18-200BZI
CY7C1411AV18-200BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1426AV18-200BZXI
CY7C1413AV18-200BZXI
CY7C1415AV18-200BZXI
250
CY7C1411AV18-250BZC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1426AV18-250BZC
CY7C1413AV18-250BZC
CY7C1415AV18-250BZC
CY7C1411AV18-250BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1426AV18-250BZXC
CY7C1413AV18-250BZXC
CY7C1415AV18-250BZXC
Package
Package Type
Operating
Range
Commercial
Industrial
Commercial
Industrial
Commercial
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相關PDF資料
PDF描述
CY7C1415AV18-250BZXI 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
CY7C1415AV18-278BZC 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
CY7C1415AV18-278BZI 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
CY7C1415AV18-278BZXC 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
CY7C1415AV18-278BZXI 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
相關代理商/技術參數(shù)
參數(shù)描述
CY7C1415AV18-250CKA 制造商:Cypress Semiconductor 功能描述:
CY7C1415AV18-250CKAT 制造商:Cypress Semiconductor 功能描述:
CY7C1415BC 制造商:Cypress Semiconductor 功能描述:
CY7C1415BV18-167BZC 功能描述:靜態(tài)隨機存取存儲器 1Mx36 QDR II Burst 4 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1415BV18-167BZI 功能描述:靜態(tài)隨機存取存儲器 1Mx36 QDR II Burst 4 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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