參數(shù)資料
型號(hào)： CY7C1413AV18-167BZC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
中文描述： 2M X 18 QDR SRAM, 0.5 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁(yè)數(shù)： 20/28頁(yè)
文件大?。?/td> 1143K
代理商： CY7C1413AV18-167BZC
CY7C1411AV18
CY7C1426AV18
CY7C1413AV18
CY7C1415AV18
Document Number: 38-05614 Rev. *C
Page 20 of 28
Maximum Ratings
(
Above which the useful life may be impaired
.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with Power Applied..–55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.5V to +2.9V
Supply Voltage on V
DDQ
Relative to GND ......–0.5V to +V
DD
DC Applied to Outputs in High-Z .........–0.5V to V
DDQ
+ 0.3V
DC Input Voltage
[20]
...............................–0.5V to V
DD
+ 0.3V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage (MIL-STD-883, M. 3015)... >2001V
Latch-up Current..................................................... >200 mA
Operating Range
Range
Com’l
Ind’l
Ambient
Temperature (T
A
)
0°C to +70°C
–40°C to +85°C
V
DD
[21]
1.8 ± 0.1V
V
DDQ
[21]
1.4V to V
DD
Electrical Characteristics
Over the Operating Range
[17]
DC Electrical Characteristics
Over the Operating Range
Parameter
V
DD
V
DDQ
V
OH
V
OL
V
OH(LOW)
V
OL(LOW)
V
IH
V
IL
I
X
I
OZ
V
REF
I
DD
Description
Test Conditions
Min.
1.7
1.4
Typ.
1.8
1.5
Max.
1.9
V
DD
Unit
V
V
V
V
V
V
V
V
μ
A
μ
A
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
[20]
Input LOW Voltage
[20]
Input Leakage Current
Output Leakage Current
Input Reference Voltage
[22]
Typical Value = 0.75V
V
DD
Operating Supply
Note 18
Note 19
I
OH
=
0.1 mA, Nominal Impedance
I
OL
= 0.1 mA, Nominal Impedance
V
DDQ
/2 – 0.12
V
DDQ
/2 – 0.12
V
DDQ
– 0.2
V
SS
V
REF
+ 0.1
–0.3
5
5
0.68
V
DDQ
/2 + 0.12
V
DDQ
/2 + 0.12
V
DDQ
0.2
V
DDQ
+ 0.3
V
REF
– 0.1
5
5
0.95
600
700
800
875
925
270
300
330
355
370
GND
≤
V
I
≤
V
DDQ
GND
≤
V
I
≤
V
DDQ,
Output Disabled
0.75
V
DD
= Max., I
OUT
= 0mA,
f = f
MAX
= 1/t
CYC
167 MHz
200 MHz
250 MHz
278 MHz
300 MHz
167 MHz
200 MHz
250 MHz
278 MHz
300 MHz
I
SB1
Automatic
Power-down
Current
Max. V
DD
, Both Ports
Deselected, V
IN
≥
V
IH
or
V
IN
≤
V
IL
f = f
MAX
= 1/t
CYC
,
Inputs Static
AC Input Requirements
Over the Operating Range
Parameter
V
IH
V
IL
Notes:
17.All Voltage referenced to Ground.
18.Output are impedance controlled. I
OH
=
(V
DDQ
/2)/(RQ/5) for values of 175
<= RQ <= 350
s.
19.Output are impedance controlled. I
= (V
/2)/(RQ/5) for values of 175
<= RQ <= 350
s.
20.Overshoot: V
(AC) < V
+ 0.85V (Pulse width less than t
/2), Undershoot: V
(AC) >
1.5V (Pulse width less than t
CYC
/2).
21.Power-up: Assumes a linear ramp from 0V to V
(min.) within 200 ms. During this time V
< V
and V
< V
DD
22.V
REF
(Min.) = 0.68V or 0.46V
DDQ
, whichever is larger, V
REF
(Max.) = 0.95V or 0.54V
DDQ
, whichever is smaller.
Description
Test Conditions
Min.
Typ.
–
–
Max.
–
Unit
V
V
Input HIGH Voltage
Input LOW Voltage
V
REF
+ 0.2
–
V
REF
– 0.2
[+] Feedback
相關(guān)PDF資料
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CY7C1413AV18-167BZI 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1413AV18-167BZCES 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 2MX18 0.5NS 165FBGA - Bulk
CY7C1413AV18-167BZXC 制造商:Cypress Semiconductor 功能描述:
CY7C1413AV18-167BZXI 制造商:Cypress Semiconductor 功能描述:
CY7C1413AV18-200BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 QDR II Burst 4 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1413AV18-200BZCES 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 2MX18 0.45NS 165FBGA - Bulk
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