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參數(shù)資料
| 型號： | CY7C139AV-25JC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM |
| 中文描述： | 4K X 9 DUAL-PORT SRAM, 25 ns, PQCC68 |
| 封裝： | PLASTIC, LCC-68 |
| 文件頁數(shù)： | 8/20頁 |
| 文件大?。?/td> | 301K |
| 代理商： | CY7C139AV-25JC |
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
Document #: 38-06051 Rev. *A
Page 8 of 20
Data Retention Mode
The CY7C0138AV/144AV/006AV/007AV and CY7C139AV/
145AV/016AV/017AV are designed with battery backup in
mind. Data retention voltage and supply current are guaran-
teed over temperature. The following rules ensure data reten-
tion:
1. Chip enable (CE) must be held HIGH during data retention, with-
in V
CC
to V
CC
–
0.2V.
2. CE must be kept between V
CC
–
0.2V and 70% of V
CC
during the power-up and power-down transitions.
3. The RAM can begin operation >t
RC
after V
CC
reaches the
minimum operating voltage (3.0 volts).
Notes:
22. t
is a calculated parameter and is the greater of t
–
t
(actual) or t
–
t
(actual).
23.
CE = V
CC
, V
in
= GND to V
CC
, T
A
= 25
°
C. This parameter is guaranteed but not tested.
t
WB
t
WH
t
BDD[22]
INTERRUPT TIMING
[21]
t
INS
t
INR
SEMAPHORE TIMING
t
SOP
t
SWRD
t
SPS
t
SAA
R/W HIGH after BUSY (Slave)
R/W HIGH after BUSY HIGH (Slave)
BUSY HIGH to Data Valid
0
0
17
ns
ns
ns
15
20
25
INT Set Time
INT Reset Time
20
20
20
20
ns
ns
SEM Flag Update Pulse (OE or SEM)
SEM Flag Write to Read Time
SEM Flag Contention Window
SEM Address Access Time
10
5
5
12
5
5
ns
ns
ns
ns
20
25
Switching Characteristics
Over the Operating Range
[15]
(continued)
Parameter
Description
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
-20
Min.
Max.
Unit
-25
Min.
Max.
Timing
Parameter
Test Conditions
[23]
Max.
Unit
ICC
DR1
@ VCC
DR
= 2V
50
μ
A
Data Retention Mode
3.0V
3.0V
V
CC
>
2.0V
V
CC
to V
CC
–
0.2V
V
CC
CE
t
RC
VIH
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