參數(shù)資料
型號: CY7C1394BV18-250BZXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
中文描述: 512K X 36 DDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁數(shù): 26/27頁
文件大?。?/td> 446K
代理商: CY7C1394BV18-250BZXC
CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Document Number: 38-05623 Rev. *C
Page 26 of 27
QDR
SRAMs and Quad Data Rate
SRAMs comprise a new family of products developed by Cypress, Hitachi, IDT, Micron,
NEC and Samsung technology. All product and company names mentioned in this document are the trademarks of their respective
holders.
Package Diagram
A
PIN 1 CORNER
1
13.00±0.10
7
1.00
0.50 (0.25 M C A B
0.25 M0.05 M C
0.05 M C
B
A
0.15(4X)
0
SEATING PLANE
0
0
0
PIN 1 CORNER
TOP VIEW
BOTTOM VIEW
5
6
7
8
9
10
10.00
1
B
C
D
E
F
G
H
J
K
L
M
N
11
11
10
9
8
6
7
5
4
3
2
1
P
R
P
R
K
M
N
L
J
H
G
F
E
D
C
B
A
A
1
13.00±0.10
B
C
1
5.00
0
0.50 (165X)
1
SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)
PACKAGE WEIGHT : 0.475g
JEDEC REFERENCE : MO-216 / DESIGN 4.6C
PACKAGE CODE : BB0AC
PACKAGE CODE : BB0AC
51-85180-*A
165 FBGA 13 x 15 x 1.40 MM BB165D/BW165D
165-ball FBGA (13 x 15 x 1.4 mm) (51-85180)
A
1
PIN 1 CORNER
1
13.00±0.10
7
1.00
B
A
0.15(4X)
0
SEATING PLANE
0
0
0
PIN 1 CORNER
TOP VIEW
BOTTOM VIEW
2
3
4
5
6
7
8
9
10
10.00
1
B
C
D
E
F
G
H
J
K
L
M
N
11
11
10
9
8
6
7
5
4
3
2
1
P
R
P
R
K
M
N
L
J
H
G
F
E
D
C
B
A
A
1
13.00±0.10
B
C
1
5.00
0
51-85180-*A
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相關PDF資料
PDF描述
CY7C1394BV18-250BZXI 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1394BV18-278BZC 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1394BV18-278BZI 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1394BV18-278BZXC 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
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