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參數(shù)資料
| 型號： | CY7C1392BV18-300BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
| 中文描述： | 2M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 1/27頁 |
| 文件大?。?/td> | 446K |
| 代理商： | CY7C1392BV18-300BZC |
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18-Mbit DDR-II SIO SRAM 2-Word
Burst Architecture
CY7C1392BV18
CY7C1992BV18
CY7C1393BV18
CY7C1394BV18
Cypress Semiconductor Corporation
Document Number: 38-05623 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 27, 2006
Features
18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
300-MHz clock for high bandwidth
2-Word burst for reducing address bus frequency
Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) @ 300 MHz
Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches
Echo clocks (CQ and CQ) simplify data capture in
high-speed systems
Synchronous internally self-timed writes
1.8V core power supply with HSTL inputs and outputs
Variable drive HSTL output buffers
Expanded HSTL output voltage (1.4V - V
DD
)
Available in 165-ball FBGA package (13 x 15 x 1.4 mm)
Offered in lead-free and non lead-free packages
JTAG 1149.1 compatible test access port
Delay Lock Loop (DLL) for accurate data placement
Configuration
CY7C1392BV18 – 2M x 8
CY7C1992BV18 – 2M x 9
CY7C1393BV18 – 1M x18
CY7C1394BV18 – 512K x 36
Functional Description
The CY7C1392BV18, CY7C1992BV18, CY7C1393BV18, and
CY7C1394BV18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II SIO (Double Data Rate Separate I/O)
architecture. The DDR-II SIO consists of two separate ports to
access the memory array. The Read port has dedicated Data
outputs and the Write port has dedicated Data inputs to
completely eliminate the need to “turn around’ the data bus
required with common I/O devices. Access to each port is
accomplished using a common address bus. Addresses for
Read and Write are latched on alternate rising edges of the
input (K) clock. Write data is registered on the rising edges of
both K and K. Read data is driven on the rising edges of C and
C if provided, or on the rising edge of K and K if C/C are not
provided. Each address location is associated with two 8-bit
words in the case of CY7C1392BV18, two 9-bit words in the
case of CY7C1992BV18, two 18-bit words in the case of
CY7C1393BV18, and two 36-bit words in the case of
CY7C1394BV18, that burst sequentially into or out of the
device.
Asynchronous inputs include output impedance matching
input (ZQ). Synchronous data outputs are tightly matched to
the two output echo clocks CQ/CQ, eliminating the need for
separately capturing data from each individual DDR-II SIO
SRAM in the system design. Output data clocks (C/C) enable
maximum system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled
by the K/K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
300 MHz
300
600
278 MHz
278
580
250 MHz
250
550
200 MHz
200
500
167 MHz
167
450
Unit
MHz
mA
Maximum Operating Frequency
Maximum Operating Current
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相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1392BV18-300BZI | 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
| CY7C1392BV18-300BZXC | 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
| CY7C1392BV18-300BZXI | 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
| CY7C1393BV18-167BZC | 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
| CY7C1393BV18-167BZI | 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1392CV18-200BZC | 功能描述:靜態(tài)隨機存取存儲器 2Mx8 1.8V DDR II SIO 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1392CV18-250BZC | 功能描述:靜態(tài)隨機存取存儲器 2Mx8 1.8V DDR II SIO 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1392KV18-250BZXC | 功能描述:靜態(tài)隨機存取存儲器 18Mb DDR II SIO 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1392SC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1392SV18-250BZC | 功能描述:IC SRAM 2MX8 DDRII 165-FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應商設備封裝:8-MFP 包裝:帶卷 (TR) |
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