- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379071 > CY7C1387D-200BZXC (CYPRESS SEMICONDUCTOR CORP) 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM PDF資料下載
參數(shù)資料
| 型號： | CY7C1387D-200BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| 中文描述： | 1M X 18 CACHE SRAM, 3 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數(shù)： | 9/30頁 |
| 文件大?。?/td> | 974K |
| 代理商： | CY7C1387D-200BZXC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁當前第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁
CY7C1386D, CY7C1386F
CY7C1387D, CY7C1387F
Document Number: 38-05545 Rev. *E
Page 9 of 30
Truth Table
[4, 5, 6, 7, 8]
Operation
Add. Used
CE
1
CE
2
CE
3
ZZ
ADSP
ADSC
ADV
WRITE
OE CLK
DQ
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Sleep Mode, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
None
None
None
None
None
None
External
External
External
External
External
Next
Next
Next
H
L
L
L
L
X
L
L
L
L
L
X
X
H
X
L
X
L
X
X
H
H
H
H
H
X
X
X
X
X
H
X
H
X
L
L
L
L
L
X
X
X
L
L
L
L
L
H
L
L
L
L
L
L
L
L
X
L
L
H
H
X
L
L
H
H
H
H
H
X
L
X
X
L
L
X
X
X
L
L
L
H
H
H
X
X
X
X
X
X
X
X
X
X
X
L
L
L
X
X
X
X
X
X
X
X
L
H
H
H
H
H
X
X
X
X
X
X
L
H
X
L
H
L
H
L
L-H
L-H
L-H
L-H
L-H
X
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
Tri-State
Tri-State
Tri-State
Tri-State
Tri-State
Tri-State
Q
Tri-State
D
Q
Tri-State
Q
Tri-State
Q
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H
Tri-State
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
Write Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H
Tri-State
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H
Tri-State
Write Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
Write Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
Notes
4. X = Don't Care, H = Logic HIGH, L = Logic LOW.
5. WRITE = L when any one or more byte write enable signals, and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.
6. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW
. Writes may occur only on subsequent clocks after
the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't
care for the remainder of the write cycle.
8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
[+] Feedback
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1387D-200BZXI | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| CY7C1387D-250AXI | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| CY7C1387D-250BZI | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| CY7C1387D-250BZXI | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
| CY7C1387F-167BGC | 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C138XC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C139-25JC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C139-25JXC | 功能描述:IC SRAM 36KBIT 25NS 68PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1392CV18-200BZC | 功能描述:靜態(tài)隨機存取存儲器 2Mx8 1.8V DDR II SIO 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1392CV18-250BZC | 功能描述:靜態(tài)隨機存取存儲器 2Mx8 1.8V DDR II SIO 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。