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| 型號(hào)： | CY7C1386C-200AC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM |
| 中文描述： | 512K X 36 CACHE SRAM, 3 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 |
| 文件頁(yè)數(shù)： | 13/34頁(yè) |
| 文件大?。?/td> | 554K |
| 代理商： | CY7C1386C-200AC |
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CY7C1386C
CY7C1387C
Document #: 38-05239 Rev. *B
Page 13 of 34
READ Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H
Tri-State
WRITE Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
WRITE Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H
Tri-State
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
READ Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H
Tri-State
WRITE Cycle,Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
WRITE Cycle,Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
Notes:
3. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
4. WRITE = L when any one or more Byte Write enable signals and BWE = L or GW= L. WRITE = H when all Byte write enable signals , BWE, GW = H.
5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6. CE
1
, CE
2
, and CE
3
are available only in the TQFP package. BGA package has only 2 chip selects CE
1
and CE
2
.
7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW
. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a
8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are Tri-State when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
9. Table only lists a partial listing of the byte write combinations. Any Combination of BW
X
is valid Appropriate write will be done based on which byte write is active.
Partial Truth Table for Read/Write
[5, 9]
Function (CY7C1386C)
GW
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
BWE
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
BW
D
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
X
BW
C
X
H
H
H
H
L
L
L
L
H
H
H
H
L
L
L
L
X
BW
B
X
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
X
BW
A
X
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
X
Read
Read
Write Byte A – ( DQ
A
and DQP
A
)
Write Byte B – ( DQ
B
and DQP
B
)
Write Bytes B, A
Write Byte C – ( DQ
C
and DQP
C
)
Write Bytes C, A
Write Bytes C, B
Write Bytes C, B, A
Write Byte D – ( DQ
D
and DQP
D
)
Write Bytes D, A
Write Bytes D, B
Write Bytes D, B, A
Write Bytes D, C
Write Bytes D, C, A
Write Bytes D, C, B
Write All Bytes
Write All Bytes
Truth Table for Read/Write
[5]
Function (CY7C1387C)
GW
H
H
H
H
H
L
BWE
H
L
L
L
L
X
BW
B
X
H
H
L
L
X
BW
A
X
H
L
H
L
X
Read
Read
Write Byte A – ( DQ
A
and DQP
A
)
Write Byte B – ( DQ
B
and DQP
B
)
Write All Bytes
Write All Bytes
Truth Table
[ 3, 4, 5, 6, 7, 8]
Operation
Add. Used
CE
1
CE
2
CE
3
ZZ
ADSP
ADSC
ADV
WRITE
OE CLK
DQ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1386C-200AI | 18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM |
| CY7C1386C-200BGC | 18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM |
| CY7C1387C-250AC | 18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM |
| CY7C1387C | 18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM |
| CY7C1387C-167AC | 18-Mb (512K x 36/1M x 18) Pipelined DCD Sync SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1386D-167AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 3.3V COM 2CD Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1386D-167AXCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 3.3V COM 2CD Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1386D-200AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 3.3V COM 2CD Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1386D-200AXCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 3.3V COM 2CD Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1386D-200BGCT | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 18MBIT 512KX36 3NS 119BGA - Tape and Reel |
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