參數(shù)資料
型號(hào): CY7C1381D
廠商: Cypress Semiconductor Corp.
英文描述: 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
中文描述: 18兆位(為512k × 36/1M × 18)流通過(guò)的SRAM
文件頁(yè)數(shù): 20/29頁(yè)
文件大小: 477K
代理商: CY7C1381D
PRELIMINARY
CY7C1381D
CY7C1383D
Document #: 38-05544 Rev. *A
Page 20 of 29
Thermal Resistance
[18]
Parameter
Θ
JA
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard
test methods and procedures
for measuring thermal
impedence, per EIA / JESD51.
TQFP Package BGA Package fBGA Package
31
45
Unit
°C/W
46
Θ
JC
6
7
3
°C/W
Capacitance
[18]
Parameter
C
IN
C
CLK
C
I/O
Description
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
DD
= 3.3V.
V
DDQ
= 2.5V
TQFP Package
5
5
5
BGA Package
8
8
8
fBGA Package
9
9
9
Unit
pF
pF
pF
Input Capacitance
Clock Input Capacitance
Input/Output Capacitance
AC Test Loads and Waveforms
Switching Characteristics
Over the Operating Range
[20, 21]
Parameter
t
POWER
Clock
t
CYC
t
CH
t
CL
Output Times
t
CDV
t
DOH
t
CLZ
t
CHZ
t
OEV
t
OELZ
t
OEHZ
Setup Times
t
AS
Description
133 MHz
Min.
1
100 MHz
Min.
1
Unit
ms
Max.
Max.
V
DD
(Typical) to the first Access
[19]
Clock Cycle Time
Clock HIGH
Clock LOW
7.5
2.1
2.1
10
2.5
2.5
ns
ns
ns
Data Output Valid After CLK Rise
Data Output Hold After CLK Rise
Clock to Low-Z
[20, 21, 22]
Clock to High-Z
[20, 21, 22]
OE LOW to Output Valid
OE LOW to Output Low-Z
[20, 21, 22]
OE HIGH to Output High-Z
[20, 21, 22]
6.5
8.5
ns
ns
ns
ns
ns
ns
ns
2.0
2.0
0
2.0
2.0
0
4.0
3.2
5.0
3.8
0
0
4.0
5.0
Address Set-up Before CLK Rise
1.5
1.5
ns
OUTPUT
R = 317
R = 351
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
T
= 1.5V
3.3V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
1ns
1ns
(c)
OUTPUT
R = 1667
R =1538
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
T
= 1.25V
2.5V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
1ns
1ns
(c)
3.3V I/O Test Load
2.5V I/O Test Load
相關(guān)PDF資料
PDF描述
CY7C1381D-100AXC 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
CY7C1381D-100AXI 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
CY7C1381D-100BGC 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
CY7C1381D-100BGI 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
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CY7C1381D-100BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 3.3V COM Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1381D-100BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 3.3V IND Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray