參數(shù)資料
型號(hào): CY7C1370C-225BGI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
中文描述: 512K X 36 ZBT SRAM, 2.8 ns, PBGA119
封裝: 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
文件頁數(shù): 27/27頁
文件大?。?/td> 704K
代理商: CY7C1370C-225BGI
CY7C1370C
CY7C1372C
Document #: 38-05233 Rev. *D
Page 27 of 27
Document History Page
Document Title: CY7C1370C/CY7C1372C 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
Document Number: 38-05233
Orig. of
Change
**
116273
08/27/02
SKX
New Data Sheet
*A
121536
11/21/02
DSG
Updated package diagrams 51-85115 (BG119) to rev. *B and 51-85122
(BB165A) to rev. *C
*B
206100
see ECN
RKF
Final Data Sheet
*C
225487
See ECN
VBL
Update Ordering Info section: unshade active part numbers
*D
231349
See ECN
DIM
Pin H2 (165 fBGA) changed from NC to NC/
V
DD
.
REV.
ECN No.
Issue Date
Description of Change
相關(guān)PDF資料
PDF描述
CY7C1370C-225BZI 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
CY7C1370C-250AC 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
CY7C1370C-250AI 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
CY7C1370C-250BGC 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
CY7C1370C-250BGI 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1370CV25-133AC 制造商:Cypress Semiconductor 功能描述:16MB (512KX36) 2.5V NOBL-PIPE SRAM - Bulk
CY7C1370CV25-167AC 制造商:Cypress Semiconductor 功能描述:
CY7C1370CV25167BZC 制造商:Cypress Semiconductor 功能描述:
CY7C1370CV25-167BZI 制造商:Cypress Semiconductor 功能描述:
CY7C1370D-167AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 3.3V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray