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| 型號(hào)： | CY7C1370C-225BGC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture |
| 中文描述： | 512K X 36 ZBT SRAM, 2.8 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 |
| 文件頁(yè)數(shù)： | 9/27頁(yè) |
| 文件大?。?/td> | 704K |
| 代理商： | CY7C1370C-225BGC |
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CY7C1370C
CY7C1372C
Document #: 38-05233 Rev. *D
Page 9 of 27
NOP/WRITE ABORT (Begin Burst)
WRITE ABORT (Continue Burst)
IGNORE CLOCK EDGE (Stall)
SNOOZE MODE
None
Next
Current
None
L
X
X
X
L
L
L
H
L
H
X
X
L
X
X
X
H
H
X
X
X
X
X
X
L
L
H
X
L-H
L-H
L-H
X
Three-State
Three-State
–
Three-State
Truth Table
[1, 2, 3, 4, 5, 6, 7]
(continued)
Operation
Address
Used
CE
ZZ
ADV/LD
WE
BW
x
OE
CEN
CLK
DQ
Partial Write Cycle Description
[1, 2, 3, 8]
Function (CY7C1370C)
WE
H
BW
d
X
BW
c
X
BW
b
X
BW
a
X
Read
Write – No bytes written
L
H
H
H
H
Write Byte a – (DQ
a
and
DQP
a
)
Write Byte b – (DQ
b
and
DQP
b
)
Write Bytes b, a
L
H
H
H
L
L
H
H
L
H
L
H
H
L
L
Write Byte c – (DQ
c
and
DQP
c
)
Write Bytes c, a
L
H
L
H
H
L
H
L
H
L
Write Bytes c, b
L
H
LL
L
H
Write Bytes c, b, a
L
H
L
L
L
Write Byte d – (DQ
d
and
DQP
d
)
Write Bytes d, a
L
L
H
H
H
L
L
H
H
L
Write Bytes d, b
L
L
H
L
H
Write Bytes d, b, a
L
L
H
L
L
Write Bytes d, c
L
L
L
H
H
Write Bytes d, c, a
L
L
L
H
L
Write Bytes d, c, b
L
L
L
L
H
Write All Bytes
L
L
L
L
L
Function (CY7C1372C)
WE
H
L
L
L
L
BW
b
x
H
H
L
L
BW
a
x
H
L
H
L
Read
Write – No Bytes Written
Write Byte a – (DQ
a
and
DQP
a
)
Write Byte b – (DQ
b
and
DQP
b
)
Write Both Bytes
Note:
8. Table only lists a partial listing of the byte write combinations. Any combination of BW
[a:d]
is valid. Appropriate write will be done based on which byte write is active.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1370C-225BGI | 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture |
| CY7C1370C-225BZI | 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture |
| CY7C1370C-250AC | 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture |
| CY7C1370C-250AI | 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture |
| CY7C1370C-250BGC | 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1370CV25-133AC | 制造商:Cypress Semiconductor 功能描述:16MB (512KX36) 2.5V NOBL-PIPE SRAM - Bulk |
| CY7C1370CV25-167AC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1370CV25167BZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1370CV25-167BZI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1370D-167AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx36 3.3V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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