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參數(shù)資料
| 型號： | CY7C1362B-166BZI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
| 中文描述： | 512K X 18 CACHE SRAM, 3.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165 |
| 文件頁數(shù)： | 10/34頁 |
| 文件大?。?/td> | 895K |
| 代理商： | CY7C1362B-166BZI |
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CY7C1360B
CY7C1362B
Document #: 38-05291 Rev. *C
Page 10 of 34
ADSP
84
84
A4
B9
Input-
Synchronous
Address Strobe from Processor, sampled on
the rising edge of CLK, active LOW
. When
asserted LOW, addresses presented to the device
are captured in the address registers. A
1
, A
0
are
also loaded into the burst counter. When ADSP
and ADSC are both asserted, only ADSP is recog-
nized. ASDP is ignored when CE
1
is deasserted
HIGH.
ADSC
85
85
P4
A8
Input-
Synchronous
Address Strobe from Controller, sampled on
the rising edge of CLK, active LOW
. When
asserted LOW, addresses presented to the device
are captured in the address registers. A
1
, A
0
are
also loaded into the burst counter. When ADSP
and ADSC are both asserted, only ADSP is recog-
nized.
ZZ
64
64
T7
H11
Input-
Asynchronous
ZZ “Sleep” Input, active HIGH
. When asserted
HIGH places the device in a non-time-critical
“sleep” condition with data integrity preserved. For
normal operation, this pin has to be LOW or left
floating. ZZ pin has an internal pull-down.
DQs,
DQPs
58,59,62,
63,68,69,
72,73,8,9,
12,13,18,
19,22,23,
74,24
58,59,62,
63,68,69,
72,73,8,9,
12,13,18,
19,22,23,
74,24
P7,K7,
G7,E7,
F6,H6,L6,
N6,D1,
H1,L1,
N1,E2,
G2,K2,
M2,D6,
P2
J10,K10,
L10,M10,
D11,E11,
F11,G11,J1,
K1,L1,M1,D
2,E2,F2,
G2,C11,N1
I/O-
Synchronous
Bidirectional Data I/O lines
. As inputs, they feed
into an on-chip data register that is triggered by the
rising edge of CLK. As outputs, they deliver the
data contained in the memory location specified by
the addresses presented during the previous clock
rise of the a Read cycle. The direction of the pins
is controlled by OE. When OE is asserted LOW,
the pins behave as outputs. When HIGH, DQs and
DQP
X
are placed in a three-state condition.
Power Supply
Power supply inputs to the core of the device
.
V
DD
15,41,65,
91
15,41,65,
91
C4,J2,J4,
J6,R4
D4,D8,E4,E
8,F4,F8,
G4,G8,H4,
H8,J4,J8,
K4,K8,L4,
L8,M4,M8
V
SS
17,40,67,
90
17,40,67,
90
D3,D5,
E5,E3,F3,
F5,G5,
H3,H5,
K3,K5,L3,
M3,M5,
N3,N5,
P3,P5
H2,C4,C5,
C6,C7,C8,
D5,D6,D7,E
5,E6,E7,
F5,F6,F7,
G5,G6,G7,
H5,H6,H7,J
5,J6,J7,
K5,K6,K7,
L5,L6,L7,
M5,M6,M7,
N4,N8
Ground
Ground for the core of the device
.
V
SSQ
5,10,21,26,
55,60,71,
76
5,10,21,26,
55,60,71,
76
-
-
I/O Ground
Ground for the I/O circuitry
.
CY7C1362B–Pin Definitions
(continued)
Name
TQFP
3-Chip
Enable
TQFP
2-Chip
Enable
BGA
fBGA
I/O
Description
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1362B-166BZC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
| CY7C1362B-225BZC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
| CY7C1362B-225BGI | BACKSHELL, MDR 68 WAY METALBACKSHELL, MDR 68 WAY METAL; Material:Aluminum; Ways, No. of:68; Colour:Steel |
| CY7C1362B-225BZI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1362B-200AC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 3.3V 9M-Bit 512K x 18 3ns 100-Pin TQFP |
| CY7C1362C-166AJXC | 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V COM Sync PL 1CD 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1362C-166AJXCT | 功能描述:IC SRAM 9MBIT 166MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1362C-166AXC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 9M-Bit 512K x 18 3.5ns 100-Pin TQFP |
| CY7C1362C-166BZC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
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