參數(shù)資料
型號: CY7C1357C-100BZXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
中文描述: 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
封裝: 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁數(shù): 23/28頁
文件大?。?/td> 456K
代理商: CY7C1357C-100BZXC
CY7C1355C
CY7C1357C
Document #: 38-05539 Rev. *E
Page 23 of 28
ZZ Mode Timing
[26, 27]
Notes:
26.Device must be deselected when entering ZZ mode. See truth table for all possible signal conditions to deselect the device.
27.DQs are in high-Z when exiting ZZ sleep mode.
Switching Waveforms
(continued)
tZZ
I
SUPPLY
CLK
ZZ
tZZREC
ALL INPUTS
(except ZZ)
DON’T CARE
IDDZZ
tZZI
tRZZI
Outputs (Q)
High-Z
DESELECT or READ Only
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1357C-100BZXI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1357C-133AXC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1357C-133AXI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1357C-133BGC 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
CY7C1357C-133BGI 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL⑩ Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1357C133AXC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 9M-Bit 512K x 18 6.5ns 100-Pin TQFP Tray
CY7C1357C-133AXC 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1357C-133AXCKJ 制造商:Cypress Semiconductor 功能描述:
CY7C1357C-133AXCT 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1357C133AXI 制造商:CYPRESS 功能描述:New