參數(shù)資料
型號(hào): CY7C1356CV25-225BZXC
廠商: Cypress Semiconductor Corp.
英文描述: 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
中文描述: 9兆位(256 × 36/512K × 18)流水線(xiàn)的SRAM的總線(xiàn)延遲,TM架構(gòu)
文件頁(yè)數(shù): 12/25頁(yè)
文件大?。?/td> 353K
代理商: CY7C1356CV25-225BZXC
PRELIMINARY
CY7C1354CV25
CY7C1356CV25
Document #: 38-05537 Rev. *B
Page 12 of 25
pre-set HIGH to enable the output when the device is
powered-up, and also when the TAP controller is in the
“Test-Logic-Reset” state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
TAP Timing
TAP AC Switching Characteristics
Over the Operating Range
[11, 12]
Parameter
Clock
t
TCYC
t
TF
t
TH
t
TL
Output Times
t
TDOV
t
TDOX
Set-up Times
t
TMSS
t
TDIS
t
CS
Hold Times
t
TMSH
t
TDIH
t
CH
Notes:
11. t
and t
refer to the set-up and hold time requirements of latching data from the boundary scan register.
12.Test conditions are specified using the load in TAP AC test Conditions. t
R
/t
F
= 1ns.
Description
Min.
Max.
Unit
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH time
TCK Clock LOW time
50
ns
MHz
ns
ns
20
25
25
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
5
ns
ns
0
TMS Set-up to TCK Clock Rise
TDI Set-up to TCK Clock Rise
Capture Set-up to TCK Rise
5
5
5
ns
ns
TMS hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
5
5
5
ns
ns
ns
tTL
Test Clock
(TCK)
1
2
3
4
5
6
Test Mode Select
(TMS)
tTH
Test Data-Out
(TDO)
tCYC
Test Data-In
(TDI)
tTMSH
tTMSS
tTDIH
tTDIS
tTDOX
tTDOV
DON’T CARE
UNDEFINED
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CY7C1356CV25-225BZXI 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
CY7C1354CV25-167AXI 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
CY7C1354CV25-167BGC 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
CY7C1354CV25-167BGI 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
CY7C1354CV25-167BGXC 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
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