參數(shù)資料
型號: CY7C1356C-250BGC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
中文描述: 512K X 18 ZBT SRAM, 2.8 ns, PBGA119
封裝: (14 X 22 X 2.4) MM, PLASTIC, BGA-119
文件頁數(shù): 9/28頁
文件大小: 467K
代理商: CY7C1356C-250BGC
CY7C1354C
CY7C1356C
Document #: 38-05538 Rev. *G
Page 9 of 28
NOP/WRITE ABORT (Begin Burst)
WRITE ABORT (Continue Burst)
IGNORE CLOCK EDGE (Stall)
SLEEP MODE
None
Next
Current
None
L
X
X
X
L
L
L
H
L
H
X
X
L
X
X
X
H
H
X
X
X
X
X
X
L
L
H
X
L-H
L-H
L-H
X
Tri-State
Tri-State
-
Tri-State
Partial Write Cycle Description
[2, 3, 4, 9]
Function (CY7C1354C)
WE
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
BW
d
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
BW
c
X
H
H
H
H
L
L
L
L
H
H
H
H
L
L
L
L
BW
b
X
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
BW
a
X
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
Read
Write
–No bytes written
Write Byte a –
(DQ
a
and DQP
a
)
Write Byte b – (DQ
b
and
DQP
b
)
Write Bytes b, a
Write Byte c –
(DQ
c
and DQP
c
)
Write Bytes c, a
Write Bytes c, b
Write Bytes c, b, a
Write Byte d –
(DQ
d
and DQP
d
)
Write Bytes d, a
Write Bytes d, b
Write Bytes d, b, a
Write Bytes d, c
Write Bytes d, c, a
Write Bytes d, c, b
Write All Bytes
Partial Write Cycle Description
[2, 3, 4, 9]
Function (CY7C1356C)
WE
H
L
L
L
L
BW
b
x
H
H
L
L
BW
a
x
H
L
H
L
Read
Write – No Bytes Written
Write Byte a
(DQ
a
and
DQP
a)
Write Byte b – (DQ
b
and DQP
b)
Write Both Bytes
Note:
9. Table only lists a partial listing of the byte write combinations. Any combination of BW
X
is valid. Appropriate write will be done based on which byte write is active.
Truth Table
[2, 3, 4, 5, 6, 7, 8]
Operation
Address
Used
CE ZZ
ADV/LD
WE
BWx
OE
CEN
CLK
DQ
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1356C-250BGI 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
CY7C1356C-250BGXC 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1356CV25-166AXC 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1356CV25-166AXCT 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1356CV25-166CKJ 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1356CV25-200AXC 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1356CV25-200AXCT 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray