參數(shù)資料
型號： CY7C1356C-250AXI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
中文描述： 512K X 18 ZBT SRAM, 2.8 ns, PQFP100
封裝： (14 X 20 X 1.4) MM, LEAD FREE, PLASTIC, TQFP-100
文件頁數(shù)： 17/28頁
文件大?。?/td> 467K
代理商： CY7C1356C-250AXI
CY7C1354C
CY7C1356C
Document #: 38-05538 Rev. *G
Page 17 of 28
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.5V to +4.6V
Supply Voltage on V
DDQ
Relative to GND ......–0.5V to +V
DD
DC to Outputs in Tri-State................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage ...................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0°C to +70°C
–40°C to +85°C
V
DD
V
DDQ
3.3V
–5%/+10% 2.5V – 5%
to
V
DD
Electrical Characteristics
Over the Operating Range
[14, 15]
Parameter
V
DD
V
DDQ
Description
Power Supply Voltage
I/O Supply Voltage
Test Conditions
Min.
3.135
3.135
2.375
2.4
2.0
Max.
3.6
V
DD
2.625
Unit
V
V
V
V
V
V
V
V
V
V
V
μ
A
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O, I
OH
=
4.0 mA
for 2.5V I/O, I
OH
=
1.0 mA
for 3.3V I/O, I
OL
=
8.0 mA
for 2.5V I/O, I
OL
=
1.0 mA
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O
for 2.5V I/O
GND
≤
V
I
≤
V
DDQ
V
OH
Output HIGH Voltage
V
OL
Output LOW Voltage
0.4
0.4
V
IH
Input HIGH Voltage
2.0
1.7
–0.3
–0.3
–5
V
DD
+ 0.3V
V
DD
+ 0.3V
0.8
0.7
5
V
IL
Input LOW Voltage
[16]
I
X
Input Leakage Current
except ZZ and MODE
Input Current of MODE Input = V
SS
–30
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
mA
mA
mA
Input = V
DD
Input = V
SS
Input = V
DD
5
Input Current of ZZ
–5
30
5
250
220
180
130
120
110
40
I
OZ
I
DD
Output Leakage Current GND
≤
V
I
≤
V
DDQ,
Output Disabled
V
DD
Operating Supply
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
–5
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
All speed grades
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = f
MAX
= 1/t
CYC
I
SB2
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
0.3V,
f = 0
Max. V
DD
, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
0.3V,
f = f
MAX
= 1/t
CYC
I
SB3
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
All speed grades
120
110
100
40
mA
mA
mA
mA
I
SB4
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = 0
Notes:
14.Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
/2), undershoot: V
(AC)> –2V (Pulse width less than t
CYC
/2).
15.T
: Assumes a linear ramp from 0V to V
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
<
V
DD
16.Tested initially and after any design or process changes that may affect these parameters.
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CY7C1356CV25-166CKJ 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
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CY7C1356CV25-200AXCT 功能描述:靜態(tài)隨機存取存儲器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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