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參數(shù)資料
| 型號(hào)： | CY7C1356C-200AXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| 中文描述： | 512K X 18 ZBT SRAM, 3.2 ns, PQFP100 |
| 封裝： | (14 X 20 X 1.4) MM, LEAD FREE, PLASTIC, TQFP-100 |
| 文件頁數(shù)： | 1/28頁 |
| 文件大小： | 467K |
| 代理商： | CY7C1356C-200AXC |
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9-Mbit (256K x 36/512K x 18)
Pipelined SRAM with NoBL Architecture
CY7C1354C
CY7C1356C
Cypress Semiconductor Corporation
Document #: 38-05538 Rev. *G
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised September 14, 2006
Features
Pin-compatible and functionally equivalent to ZBT
Supports 250-MHz bus operations with zero wait states
— Available speed grades are 250, 200, and 166 MHz
Internally self-timed output buffer control to eliminate
the need to use asynchronous OE
Fully registered (inputs and outputs) for pipelined
operation
Byte Write capability
Single 3.3V power supply (V
DD
)
3.3V or 2.5V I/O power supply (V
DDQ
)
Fast clock-to-output times
— 2.8 ns (for 250-MHz device)
Clock Enable (CEN) pin to suspend operation
Synchronous self-timed writes
Available in lead-free 100-Pin TQFP package, lead-free
and non lead-free 119-Ball BGA package and 165-Ball
FBGA package
IEEE 1149.1 JTAG-Compatible Boundary Scan
Burst capability
–
linear or interleaved burst order
“ZZ” Sleep Mode option and Stop Clock option
Functional Description
[1]
The CY7C1354C and CY7C1356C are 3.3V, 256K x 36 and
512K x 18 Synchronous pipelined burst SRAMs with No Bus
Latency (NoBL
)
logic, respectively. They are designed to
support unlimited true back-to-back Read/Write operations
with no wait states. The CY7C1354C and CY7C1356C are
equipped with the advanced (NoBL) logic required to enable
consecutive Read/Write operations with data being trans-
ferred on every clock cycle. This feature dramatically improves
the throughput of data in systems that require frequent
Write/Read transitions. The CY7C1354C and CY7C1356C are
pin compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle.
Write operations are controlled by the Byte Write Selects
(BW
a
–BW
d
for CY7C1354C and BW
a
–BW
b
for CY7C1356C)
and a Write Enable (WE) input. All writes are conducted with
on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
Note:
1. For best-practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
A0, A1, A
C
MODE
BW
a
BW
b
BW
c
BW
d
WE
CE1
CE2
CE3
OE
READ LOGIC
DQs
DQP
a
DQP
b
DQP
c
DQP
d
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
ARRAY
E
E
INPUT
REGISTER 0
ADDRESS
REGISTER 0
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
BURST
LOGIC
A0'
A1'
D1
D0
Q1
Q0
A0
A1
C
ADV/LD
ADV/LD
E
INPUT
REGISTER 1
S
E
N
S
E
A
M
P
S
E
CLK
CEN
WRITE
DRIVERS
ZZ
SLEEP
CONTROL
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
Logic Block Diagram–CY7C1354C (256K x 36)
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| CY7C1356C-200AXI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
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| CY7C1356C-200BGI | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
| CY7C1356C-200BGXC | 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1356C-250AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1356C-250AXCKJ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1356C-250AXCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1356CV25-166AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1356CV25-166AXCT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 512Kx18 3.3V NoBL Sync FT 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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