參數(shù)資料
型號： CY7C1354CV25
廠商： Cypress Semiconductor Corp.
英文描述： 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
中文描述： 9兆位（256 × 36/512K × 18）流水線的SRAM架構(gòu)的總線延遲⑩
文件頁數(shù)： 16/28頁
文件大?。?/td> 444K
代理商： CY7C1354CV25
CY7C1354CV25
CY7C1356CV25
Document #: 38-05537 Rev. *H
Page 16 of 28
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.5V to +3.6V
Supply Voltage on V
DDQ
Relative to GND ......–0.5V to +V
DD
DC to Outputs in Tri-State................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Electrical Characteristics
Over the Operating Range
[14, 15]
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
DD
/
V
DDQ
2.5V ± 5%
Parameter
V
DD
V
DDQ
V
OH
V
OL
V
IH
V
IL
I
X
Description
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[14]
Input Leakage Current
except ZZ and MODE
Input Current of MODE Input = V
SS
Test Conditions
Min.
2.375
2.375
2.0
Max.
2.625
V
DD
Unit
V
V
V
V
V
V
μ
A
for 2.5V I/O
for 2.5V I/O, I
OH
=
1.0 mA
for 2.5V I/O, I
OL
= 1.0 mA
for 2.5V I/O
for 2.5V I/O
GND
≤
V
I
≤
V
DDQ
0.4
1.7
–0.3
–5
V
DD
+ 0.3V
0.7
5
–30
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
mA
mA
mA
Input = V
DD
Input = V
SS
Input = V
DD
5
Input Current of ZZ
–5
30
5
250
220
180
130
120
110
40
I
OZ
I
DD
Output Leakage Current GND
≤
V
I
≤
V
DDQ,
Output Disabled
V
DD
Operating Supply
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
–5
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
All speed grades
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = f
MAX
=
1/t
CYC
I
SB2
Automatic CE
Power-down
Current—CMOS Inputs
Automatic CE
Power-down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
0.3V,
f = 0
Max. V
DD
, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
0.3V,
f = f
MAX
= 1/t
CYC
I
SB3
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
All speed grades
120
110
100
40
mA
mA
mA
mA
I
SB4
Automatic CE
Power-down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = 0
Notes:
14.Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
/2), undershoot: V
(AC)> –2V (Pulse width less than t
CYC
/2).
15.T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1356CV25-166BGC 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
CY7C1356CV25-166BGI 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
CY7C1356CV25-166BGXC 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
CY7C1356CV25-166BGXI 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
CY7C1356CV25-166BZC 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL⑩ Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1354CV25-166AXC 功能描述:靜態(tài)隨機(jī)存取存儲器 256Kx36 2.5V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1354CV25-166AXCT 功能描述:靜態(tài)隨機(jī)存取存儲器 256Kx36 2.5V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1354CV25-166BZC 功能描述:靜態(tài)隨機(jī)存取存儲器 256Kx36 2.5V NoBL Sync-PL 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1354CV25-166BZCT 功能描述:靜態(tài)隨機(jī)存取存儲器 256Kx36 2.5V NoBL Sync-PL 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1354CV25-166BZI 制造商:Cypress Semiconductor 功能描述:
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