參數資料
型號: CY7C1354CV25-167BGI
廠商: Cypress Semiconductor Corp.
英文描述: 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
中文描述: 9兆位(256 × 36/512K × 18)流水線的SRAM的總線延遲,TM架構
文件頁數: 24/25頁
文件大?。?/td> 353K
代理商: CY7C1354CV25-167BGI
PRELIMINARY
CY7C1354CV25
CY7C1356CV25
Document #: 38-05537 Rev. *B
Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Page 24 of 25
NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device
Technology. All product and company names mentioned in this document are the trademarks of their respective holders.
Package Diagrams
(continued)
51-85180-**
165 FBGA 13 x 15 x 1.40 MM BB165D
相關PDF資料
PDF描述
CY7C1354CV25-167BGXC 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
CY7C1354CV25-167BGXI 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
CY7C1354CV25-167BZC 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
CY7C1354CV25-167BZI 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
CY7C1354CV25-167BZXC 9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture
相關代理商/技術參數
參數描述
CY7C1354CV25-200AXC 功能描述:靜態(tài)隨機存取存儲器 256Kx36 2.5V NoBL Sync PL 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1354CV25-200AXCT 功能描述:IC SRAM 9MBIT 200MHZ 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:NoBL™ 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M(8Mx32) 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA(8x13) 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY7C1354CV25-200BZC 制造商:Cypress Semiconductor 功能描述:CY7C1354CV25 9 Mb (256 K x 36) 200 MHz 2.5 V Pipelined SRAM - BGA-165 制造商:Cypress Semiconductor 功能描述:CY7C1354CV25 9 Mb (256 K x 36) 200 MHz 2.5 V Pipelined SRAM - FBGA-165
CY7C1354CV25-200CKJ 制造商:Cypress Semiconductor 功能描述:
CY7C1354D-200BZC 制造商:Cypress Semiconductor 功能描述:SYNC SRAMS - Trays 制造商:Cypress Semiconductor 功能描述:IC SRAM 9MBIT 200MHZ 165FBGA