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參數(shù)資料
| 型號(hào)： | CY7C1350F-225BGI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture |
| 中文描述： | 128K X 36 ZBT SRAM, 2.6 ns, PBGA119 |
| 封裝： | 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 |
| 文件頁(yè)數(shù)： | 9/16頁(yè) |
| 文件大?。?/td> | 539K |
| 代理商： | CY7C1350F-225BGI |
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CY7C1350F
Document #: 38-05305 Rev. *A
Page 9 of 16
I
SB2
Automatic CE
Power-Down
Current—CMOS Inputs
Automatic CE
Power-Down
Current—CMOS Inputs
V
DD
= Max, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
– 0.3V,
f = 0
V
DD
= Max, Device Deselected, or
V
IN
≤
0.3V or V
IN
> V
DDQ
– 0.3V
f = f
MAX
= 1/t
CYC
All speeds
40
mA
I
SB3
4-ns cycle, 250 MHz
4.4-ns cycle, 225 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
All speeds
105
100
95
85
75
65
45
mA
mA
mA
mA
mA
mA
mA
I
SB4
Automatic CE
Power-Down
Current—TTL Inputs
V
DD
= Max, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = 0
AC Test Loads and Waveforms
Electrical Characteristics
Over the Operating Range
[10, 11]
(continued)
Parameter
Description
Test Conditions
Min.
Max.
Unit
OUTPUT
R = 317
R = 351
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
L
= 1.5V
3.3V
ALL INPUT PULSES
V
DD
GND
90%
10%
90%
10%
≤
1 ns
≤
1 ns
(c)
OUTPUT
R = 1667
R =1538
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R
L
= 50
Z
0
= 50
V
L
= 1.25V
2.5V
ALL INPUT PULSES
V
DD
GND
90%
10%
90%
10%
≤
1 ns
≤
1 ns
(c)
3.3V I/O Test Load
2.5V I/O Test Load
Thermal Resistance
[12]
Parameter
Θ
JA
Description
Test Conditions
TQFP
Package
41.83
BGA
Package
47.63
Units
°
C/W
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test conditions follow standard test methods
and procedures for measuring thermal imped-
ance, per EIA / JESD51.
Θ
JC
9.99
11.71
°
C/W
Capacitance
[12]
Parameter
Description
Test Conditions
TQFP
Package
BGA
Package
Unit
C
IN
C
I/O
Input Capacitance
T
A
= 25°C, f = 1 MHz,
V
DD
= 3.3V, V
DDQ
= 3.3V
5
5
pF
Input/Output Capacitance
5
7
pF
Note:
12.Tested initially and after any design or process changes that may affect these parameters.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1350F-250AC | 4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture |
| CY7C1350F-250AI | 4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture |
| CY7C1350F-250BGC | 4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture |
| CY7C1350F-250BGI | 4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture |
| CY7C1350F | 4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1350F-250AXI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1350G-100AXC | 制造商:MAJOR 功能描述: |
| CY7C1350G133AXC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1350G-133AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 128Kx36 3.3V NoBL Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1350G-133AXCB | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
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