參數(shù)資料
型號(hào): CY7C1350F-200BGC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture
中文描述: 128K X 36 ZBT SRAM, 2.8 ns, PBGA119
封裝: 14 X 22 MM, 2.40 MM HEIGHT, BGA-119
文件頁數(shù): 7/16頁
文件大?。?/td> 539K
代理商: CY7C1350F-200BGC
CY7C1350F
Document #: 38-05305 Rev. *A
Page 7 of 16
Partial Truth Table for Read/Write
[2, 3, 9]
Function
WE
H
BW
D
X
BW
C
X
BW
B
X
BW
A
X
Read
Write
No bytes written
Write Byte A
(DQ
A
and
DQP
A
)
Write Byte B
(DQ
B
and
DQP
B
)
Write Bytes A, B
Write Byte C
(DQ
C
and
DQP
C
)
Write Bytes C,A
L
H
H
H
H
L
H
H
H
L
L
H
H
L
H
L
H
H
L
L
L
H
L
H
H
L
H
L
H
L
Write Bytes C, B
L
H
L
L
H
Write Bytes C, B, A
Write Byte D
(DQ
D
and
DQP
D
)
Write Bytes D, A
L
H
L
L
L
L
L
H
H
H
L
L
H
H
L
Write Bytes D, B
L
L
H
L
H
Write Bytes D, B, A
L
L
H
L
L
Write Bytes D, C
L
L
L
H
H
Write Bytes D, C, A
L
L
L
H
L
Write Bytes D, C, B
L
L
L
L
H
Write All Bytes
L
L
L
L
L
Note:
9. Table only lists a partial listing of the byte write combinations. Any combination of BW[A:D] is valid. Appropriate write will be done on which byte write is active.
ZZ Mode Electrical Characteristics
Parameter
I
DDZZ
t
ZZS
t
ZZREC
t
ZZI
t
RZZI
Description
Test Conditions
Min.
Max.
40
2t
CYC
Unit
mA
ns
ns
ns
ns
Snooze mode standby current
Device operation to ZZ
ZZ recovery time
ZZ active to snooze current
ZZ inactive to exit snooze current
ZZ > V
DD
0.2V
ZZ > V
DD
0.2V
ZZ < 0.2V
This parameter is sampled
This parameter is sampled
2t
CYC
2t
CYC
0
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