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參數(shù)資料
| 型號： | CY7C1347G-133AXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Mbit (128K x 36) Pipelined Sync SRAM |
| 中文描述： | 128K X 36 CACHE SRAM, 4 ns, PQFP100 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100 |
| 文件頁數(shù)： | 21/21頁 |
| 文件大?。?/td> | 841K |
| 代理商： | CY7C1347G-133AXC |
CY7C1347G
Document #: 38-05516 Rev. *E
Page 21 of 21
Document History Page
Document Title: CY7C1347G 4-Mbit (128K x 36) Pipelined Sync SRAM
Document Number: 38-05516
Issue
Date
Change
**
224364
See ECN
RKF
*A
276690
See ECN
VBL
REV.
ECN NO.
Orig. of
Description of Change
New data sheet
Changed TQFP package in Ordering Information section to lead-free TQFP
Added comment of BG and BZ lead-free package availability
Removed 225-MHz and 100-MHz speed grades
Modified Address Expansion balls in the pinouts for 100 TQFP Package as per
JEDEC standards and updated the Pin Definitions accordingly
Modified V
OL,
V
OH
test conditions
Replaced TBDs for
Θ
JA
and
Θ
JC
to their respective values on the Thermal Resis-
tance table
Changed the package name for 100 TQFP from A100RA to A101
Removed comment on the availability of BG lead-free package
Updated the Ordering Information by shading and unshading MPNs as per
availability
Converted from Preliminary to Final.
Changed address of Cypress Semiconductor Corporation on Page #1 from “3901
North First Street” to “198 Champion Court”
Swapped typo CE
2
and CE
in the Truth Table column heading on Page #6
Modified test condition from V
IH
< V
DD
to
V
IH
<
V
DD.
Modified test condition from V
DDQ
< V
DD
to V
DDQ
< V
DD
Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the
Electrical Characteristics Table.
Replaced Package Name column with Package Diagram in the Ordering Infor-
mation table.
Replaced Package Diagram of 51-85050 from *A to *B
Replaced Package Diagram of 51-85180 from ** to *A
Updated the Ordering Information.
Added the Maximum Rating for Supply Voltage on V
DDQ
Relative to GND.
Updated the Ordering Information table.
Corrected write timing diagram on page 12
*B
333625
See ECN
SYT
*C
419256
See ECN
RXU
*D
480124
See ECN
VKN
*E
1078184
See ECN
VKN
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相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1347G-133AXI | 4-Mbit (128K x 36) Pipelined Sync SRAM |
| CY7C1347G-133BGC | 4-Mbit (128K x 36) Pipelined Sync SRAM |
| CY7C1347G-133BGI | 4-Mbit (128K x 36) Pipelined Sync SRAM |
| CY7C1347G-133BGXC | 4-Mbit (128K x 36) Pipelined Sync SRAM |
| CY7C1347G-133BGXI | 4-Mbit (128K x 36) Pipelined Sync SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1347G-133AXC | 制造商:Cypress Semiconductor 功能描述:IC SRAM 4MBIT PARALLEL 4NS TQFP-100 |
| CY7C1347G-133AXCT | 功能描述:靜態(tài)隨機存取存儲器 128Kx36 3.3V COM Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1347G-133AXI | 功能描述:靜態(tài)隨機存取存儲器 128Kx36 3.3V IND Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1347G-133AXIT | 功能描述:靜態(tài)隨機存取存儲器 128Kx36 3.3V IND Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1347G-133BGCT | 功能描述:靜態(tài)隨機存取存儲器 128Kx36 3.3V COM Sync FT 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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