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參數(shù)資料
| 型號(hào)： | CY7C1250V18-375BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| 中文描述： | 1M X 36 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數(shù)： | 8/27頁 |
| 文件大?。?/td> | 1037K |
| 代理商： | CY7C1250V18-375BZXC |
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CY7C1246V18
CY7C1257V18
CY7C1248V18
CY7C1250V18
Document Number: 001-06348 Rev. *C
Page 8 of 27
Functional Overview
The CY7C1246V18, CY7C1257V18, CY7C1248V18, and
CY7C1250V18 are synchronous pipelined Burst SRAMs
equipped with a DDR interface.
Accesses for both ports are initiated on the Positive Input
Clock (K). All synchronous input and output timing refer to the
rising edge of the input clocks (K and K).
All synchronous data inputs (D
[x:0]
) pass through input
registers controlled by the rising edge of the input clocks (K
and K). All synchronous data outputs (Q
[x:0]
) pass through
output registers controlled by the rising edge of the input
clocks (K and K).
All synchronous control (R/W, LD, BWS
[0:X]
) inputs pass
through input registers controlled by the rising edge of the
input clock (K\K).
CY7C1248V18 is described in the following sections. The
same
basic
descriptions
CY7C1257V18, and CY7C1250V18.
apply
to
CY7C1246V18,
Read Operations
The CY7C1248V18 is organized internally as a single array of
2M x 18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
R/W
HIGH and LD LOW at the rising edge of the positive input
clock (K). Following the next two K clock rising edges, the
corresponding 18-bit word of data from this address location
is driven onto the Q
[17:0]
using K as the output timing
reference. On the subsequent rising edge of K the next 18-bit
data word is driven onto the Q
[17:0]
. The requested data is valid
0.45 ns from the rising edge of the input clock (K and K). To
maintain the internal logic, each read access must be allowed
to complete. Read accesses can be initiated on every rising
edge of the positive input clock (K).
When read access is deselected, the CY7C1248V18
completes the pending read transactions. Synchronous
internal circuitry automatically tri-states the outputs following
the next rising edge of the positive input clock (K). This
enables a seamless transition between devices without the
insertion of wait states in a depth expanded memory.
Write Operations
Write operations are initiated by asserting R/W
LOW and LD
LOW at the rising edge of the positive input clock (K). The
address presented to Address inputs is stored in the Write
Address register. On the following K clock rise, the data
presented to D
[17:0]
is latched and stored into the 18-bit Write
Data register, provided BWS
[1:0]
are both asserted active. On
the subsequent rising edge of the Negative Input Clock (K), the
information presented to D
[17:0]
is also stored into the Write
Data register, provided BWS
[1:0]
are both asserted active. The
36 bits of data are then written into the memory array at the
specified location. Write accesses can be initiated on every
rising edge of the positive input clock (K). Doing so pipelines
the data flow such that 18 bits of data can be transferred into
the device on every rising edge of the input clocks (K and K).
When write access is deselected, the device ignores all inputs
after the pending write operations are completed.
Byte Write Operations
Byte write operations are supported by the CY7C1248V18. A
write operation is initiated as described in the
Write Operations
section. The bytes that are written are determined by BWS
0
and BWS
1
, which are sampled with each set of 18-bit data
words. Asserting the appropriate Byte Write Select input
during the data portion of a write enables the data being
presented to be latched and written into the device.
Deasserting the Byte Write Select input during the data portion
of a write enables the data stored in the device for that byte to
remain unaltered. This feature can be used to simplify
read/modify/write operations to a byte write operation.
Double Data Rate Operation
The CY7C1248V18 enables high-performance operation
through high clock frequencies (achieved through pipelining)
and DDR mode of operation. The CY7C1248V18 requires two
No Operation (NOP) cycles when transitioning from a read to
a write cycle. At higher frequencies, some applications may
require a third NOP cycle to avoid contention.
If a read occurs after a write cycle, address and data for the
write are stored in registers. The write information must be
stored because the SRAM cannot perform the last word write
to the array without conflicting with the read. The data stays in
this register until the next write cycle occurs. On the first write
cycle after the read(s), the stored data from the earlier write is
written into the SRAM array. This is called a Posted Write.
If a read is performed on the same address on which a write
is performed in the previous cycle, the SRAM reads out the
most current data. The SRAM does this by bypassing the
memory array and reading the data from the registers.
Depth Expansion
Depth expansion requires replicating the LD control signal for
each bank. All other control signals can be common between
banks as appropriate.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ
pin on the SRAM and V
SS
to enable the SRAM to adjust its
output driver impedance. The value of RQ must be 5x the
value of the intended line impedance driven by the SRAM. The
allowable range of RQ to guarantee impedance matching with
a tolerance of ±15%, is between 175
and 350
,
with
V
DDQ
= 1.5V. The output impedance is adjusted every 1024
cycles upon power up to account for drifts in supply voltage
and temperature.
Echo Clocks
Echo clocks are provided on the DDR-II+ to simplify data
capture on high speed systems. Two echo clocks are
generated by the DDR-II+. CQ is referenced with respect to K
and CQ is referenced with respect to K. These are
free-running clocks and are synchronized to the input clock of
the DDR-II+. The timing for the echo clocks is shown in
“Switching Characteristics” on page 22
.
Valid Data Indicator (QVLD)
QVLD is provided on the DDR-II+ to simplify data capture on
high speed systems. The QVLD is generated by the DDR-II+
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1250V18-375BZXI | 36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1257V18 | 36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1257V18-300BZC | 36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1257V18-300BZI | 36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1257V18-300BZXC | 36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1250XC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1262XV18-366BZXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 36MB (2Mx18) 1.8v 366MHz QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1262XV18-450BZXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 36MB (2Mx18) 1.8v 450MHz QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C12631KV18-400BZI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mb X 18 400MHz QDR-II+ 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1263KV18-400BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 36MB (2Mx18) 1.8v 400MHz QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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