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參數(shù)資料
| 型號： | CY7C1049BNV33L-15VXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 512K x 8 Static RAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 15 ns, PDSO36 |
| 封裝： | 0.400 INCH, LEAD FREE, SOJ-36 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 420K |
| 代理商： | CY7C1049BNV33L-15VXC |
CY7C1049BNV33
Document #: 001-06432 Rev. **
Page 4 of 8
Data Retention Characteristics
Over the Operating Range (For L version only)
Parameter
Description
Conditions
[10]
Min.
2.0
Max
Unit
V
μ
A
ns
V
DR
I
CCDR
t
CDR[3]
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention
Time
Operation Recovery Time
V
CC
= V
DR
= 2.0V,
CE > V
CC
– 0.3V
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
330
0
t
R[11]
t
RC
ns
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1
[12, 13]
Read Cycle No. 2 (OE Controlled)
[13, 14]
Notes:
12.Device is continuously selected. OE, CE = V
IL
.
13.WE is HIGH for read cycle.
14.Address valid prior to or coincident with CE transition LOW.
3.0V
3.0V
t
CDR
V
DR
> 2V
DATA RETENTION MODE
t
R
CE
V
CC
PREVIOUS DATA VALID
DATA VALID
t
RC
t
AA
t
OHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZCE
t
PD
HIGH
OE
CE
I
CC
I
SB
IMPEDANCE
ADDRESS
DATA OUT
V
CC
SUPPLY
CURRENT
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| CY7C1049BV33-12VC | 制造商:Rochester Electronics LLC 功能描述:4MB (512K X 8)- FAST ASYNCH SRAM - Bulk 制造商:Cypress Semiconductor 功能描述: |
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| CY7C1049BV33-12VI | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Cypress Semiconductor 功能描述: |
| CY7C1049BV33-12VIT | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C1049BV33-12ZC | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 12ns 44-Pin TSOP-II |
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