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參數(shù)資料
| 型號(hào)： | CY7C1049BL-25VI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 512K x 8 Static RAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 25 ns, PDSO36 |
| 封裝： | 0.400 INCH, SOJ-36 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | CY7C1049BL-25VI |
CY7C1049B
Document #: 38-05169 Rev. *A
Page 5 of 10
Switching Characteristics
[4]
Over the Operating Range (continued)
Parameter
Read Cycle
t
power
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
Write Cycle
[8]
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
Description
7C1049B-20
Min.
7C1049B-25
Min.
Unit
Max.
Max.
V
CC
(typical) to the First Access
[5]
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
[7]
OE HIGH to High Z
[6, 7]
CE LOW to Low Z
[7]
CE HIGH to High Z
[6, 7]
CE LOW to Power-Up
CE HIGH to Power-Down
1
1
1
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
25
20
25
3
5
20
8
25
10
0
0
8
10
3
5
8
10
0
0
20
25
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
[7]
WE LOW to High Z
[6, 7]
20
13
13
0
0
13
9
0
3
25
15
15
0
0
15
10
0
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
10
Data Retention Characteristics
Over the Operating Range
Parameter
V
DR
I
CCDR
Description
Conditions
[11]
Min.
2.0
Max
Unit
V
μ
A
mA
ns
ns
V
CC
for Data Retention
Data Retention Current
Com
’
l
Ind
’
l
L V
CC
= V
DR
= 3.0V,
CE > V
CC
–
0.3V
V
IN
> V
CC
–
0.3V or V
IN
< 0.3V
200
1
t
CDR[3]
t
R[10]
Notes:
10. t
< 3 ns for the -12 and -15 speeds. t
r
< 5 ns for the -20 ns and slower speeds.
11.
No input may exceed V
CC
+ 0.5V.
Chip Deselect to Data Retention Time
Operation Recovery Time
0
t
RC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1049B-17VI | 512K x 8 Static RAM |
| CY7C1049B-20VC | 512K x 8 Static RAM |
| CY7C1049B-20VI | THERMISTOR, NTC, 0402, 47K, NICKEL; Series:B572; Thermistor type:NTC; Resistance:47kR; Tolerance, resistance:+/-5%; Beta value:4500; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree RoHS Compliant: Yes |
| CY7C1049B-25VC | PROBE, THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5kR; Tolerance, resistance:+/-10%; Beta value:4300; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:85(degree C); Temp, op. RoHS Compliant: Yes |
| CY7C1049B-25VI | THERMISTOR NTC 10K OHM 5% 0402 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1049BN-15VC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1049BN-15VCT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 15ns 36-Pin SOJ T/R |
| CY7C1049BN-15VI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1049BN-15VXC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1049BN-15VXCT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 4M-Bit 512K x 8 15ns 36-Pin SOJ T/R |
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