- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378494 > CY7C1041BNV33 (Cypress Semiconductor Corp.) 256K x 16 Static RAM PDF資料下載
參數(shù)資料
| 型號： | CY7C1041BNV33 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 256K x 16 Static RAM |
| 中文描述： | 256K × 16靜態(tài)RAM |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 412K |
| 代理商： | CY7C1041BNV33 |
256K x 16 Static RAM
Functional Description
CY7C1041BNV33
Cypress Semiconductor Corporation
Document #: 001-06434 Rev. **
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised February 1, 2006
1CY7C1041BNV33
Features
High speed
— t
AA
= 12 ns
Low active power
— 612 mW (max.)
Low CMOS standby power (Commercial L version)
— 1.8 mW (max.)
2.0V Data Retention (660
μ
W at 2.0V retention)
Automatic power-down when deselected
TTL-compatible inputs and outputs
Easy memory expansion with CE and OE features
The CY7C1041BNV33 is a high-performance CMOS Static
RAM organized as 262,144 words by 16 bits.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is
written into the location specified on the address pins (A
0
through A
17
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
8
through I/O
15
) is written into the location
specified on the address pins (A
0
through A
17
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
0
to I/O
7
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
8
to I/O
15
. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O
0
through I/O
15
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1041BNV33 is available in a standard 44-pin
400-mil-wide body width SOJ and 44-pin TSOP II package
with center power and ground (revolutionary) pinout.
1
A
1
A
Logic Block Diagram
Pin Configuration
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
COLUMN
DECODER
R
S
INPUT BUFFER
256K x 16
ARRAY
1024 x 4096
A
0
A
1
A
1
A
1
A
1
A
1
A
9
A
1
I/O
0
– I/O
7
BLE
I/O
8
– I/O
15
OE
WE
Top View
SOJ
TSOP II
WE
A
5
A
6
A
7
A
8
A
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
31
30
32
36
35
34
33
37
40
39
38
41
44
43
42
16
17
29
28
V
CC
V
SS
I/O
4
I/O
5
A
0
A
1
A
2
A
3
A
4
OE
BHE
BLE
V
SS
V
CC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
17
A
16
A
15
I/O
15
I/O
14
I/O
13
I/O
12
CE
I/O
0
I/O
1
I/O
2
I/O
3
18
19
20
21
27
26
25
24
22
23
I/O
6
I/O
7
A
14
A
13
A
12
A
11
A
10
[+] Feedback
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1041BNV33-12VXC | 256K x 16 Static RAM |
| CY7C1041BNV33-15VXC | 256K x 16 Static RAM |
| CY7C1041BNV33-15VXI | 256K x 16 Static RAM |
| CY7C1041BNV33L-12VC | 256K x 16 Static RAM |
| CY7C1041BNV33L-12VXC | 256K x 16 Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1041BNV33-15VXI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1041BNV33L-12VC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1041BNV33L-12VXC | 功能描述:靜態(tài)隨機存取存儲器 256K x 16 ASYNC 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1041BNV33L-12VXCT | 功能描述:靜態(tài)隨機存取存儲器 256K x 16 ASYNC 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1041BNV33L-12ZXC | 功能描述:靜態(tài)隨機存取存儲器 256K x 16 ASYNC 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。