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參數(shù)資料
| 型號： | CY7C1021CV26-15ZE |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1-Mbit (64K x 16) Static RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 15 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 247K |
| 代理商： | CY7C1021CV26-15ZE |
CY7C1021CV26
Document #: 38-05589 Rev. **
Page 3 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
CC
to Relative GND
[3]
....–0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[3]
......................................–0.5V to V
CC
+0.5V
DC Input Voltage
[3]
................................ –0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage............................................>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current......................................................>200 mA
Operating Range
Range
Ambient
Temperature
–40
°
C to +125
°
C
V
CC
Automotive
2.5V–2.7V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
CY7C1021CV26-15
Unit
Min.
Max.
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
OS
I
CC
Output HIGH Voltage
V
CC
= Min., I
OH
= –1.0 mA
V
CC
= Min., I
OL
= 1.0 mA
2.3
V
Output LOW Voltage
0.4
V
Input HIGH Voltage
Input LOW Voltage
[3]
2.0
V
CC
+ 0.3
0.8
V
–0.3
V
μ
A
μ
A
Input Load Current
GND < V
I
< V
CC
GND < V
I
< V
CC
, Output Disabled
V
CC
= Max., V
OUT
= GND
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
CE > V
CC
– 0.3V, V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
–3
+3
Output Leakage Current
Output Short Circuit Current
[4]
–3
+3
–300
mA
V
CC
Operating Supply Current
80
mA
I
SB1
Automatic CE Power-Down
Current —TTL Inputs
15
mA
I
SB2
Automatic CE Power-Down
Current —CMOS Inputs
10
mA
Capacitance
[5]
Parameter
Description
Test Conditions
Max.
Unit
C
IN
C
OUT
Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 2.6V
8
pF
Output Capacitance
8
pF
Thermal Resistance
[5]
Parameter
Θ
JA
Description
Test Conditions
44-lead
TSOP-II
76.92
Unit
°
C/W
Thermal Resistance
(Junction to Ambient)
[5]
Thermal Resistance
(Junction to Case)
[5]
Still Air, soldered on a 3 × 4.5 inch, two-layer
printed circuit board
Θ
JC
15.86
°
C/W
Notes:
3. V
(min.) = –2.0V and V
(max) = V
+ 0.5V for pulse durations of less than 20 ns.
4. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
5. Tested initially and after any design or process changes that may affect these parameters.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1021CV26-15ZSXE | 功能描述:靜態(tài)隨機(jī)存取存儲器 64K X 16 2.6V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1021CV26-15ZSXEKJ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1021CV26-15ZSXET | 功能描述:靜態(tài)隨機(jī)存取存儲器 64K X 16 2.6V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1021CV26-15ZXE | 功能描述:IC SRAM 1MBIT 15NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1021CV26-15ZXET | 功能描述:IC SRAM 1MBIT 15NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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