參數(shù)資料
型號(hào)： CY7C1021BV33L-8ZC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 64K x 16 Static RAM
中文描述： 64K X 16 STANDARD SRAM, 8 ns, PDSO44
封裝： TSOP2-44
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 239K
代理商： CY7C1021BV33L-8ZC
64K x 16 Static RAM
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
15
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is LOW,
then data from memory will appear on I/O
9
to I/O
16
.
See the
truth table at the back of this data sheet for a complete descrip-
tion of read and write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected
(CE HIGH), the outputs are disabled (OE HIGH), the BHE and
BLE are disabled (BHE, BLE HIGH), or during a write opera-
tion (CE LOW, and WE LOW).
The CY7C1021BV is available in 400-mil-wide SOJ, standard
44-pin TSOP Type II, and 48-ball mini BGA packages.
CY7C1021BV33
Cypress Semiconductor Corporation
Document #: 38-05148 Rev. *A
3901 North First Street
San Jose
CA 95134
Revised September 13, 2002
408-943-2600
021BV33
Features
3.3V operation (3.0V–3.6V)
High speed
—
t
AA
= 10/12/15 ns
CMOS for optimum speed/power
Low Active Power (L version)
—
576 mW (max.)
Low CMOS Standby Power (L version)
—
1.80 mW (max.)
Automatic power-down when deselected
Independent control of upper and lower bits
Available in 44-pin TSOP II and 400-mil SOJ
Available in a 48-Ball Mini BGA package
Functional Description
[1]
The CY7C1021BV is a high-performance CMOS static RAM
organized as 65,536 words by 16 bits. This device has an au-
tomatic power-down feature that significantly reduces power
consumption when deselected.
WE
A15
A14
A13
A12
NC
Logic Block Diagram
Pin Configurations
SOJ / TSOP II
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
31
30
32
36
35
34
33
37
40
39
38
Top View
41
44
43
42
16
17
29
28
CC
V
I/O5
I/O6
A
4
A3
A2
A1
A0
OE
BHE
BLE
SS
V
I/O12
I/O11
I/O10
I/O9
A5
A6
A7
I/O16
I/O15
I/O14
V
CE
I/O1
I/O2
I/O3
V
NC
A8
A9
A10
A11
18
19
20
21
27
26
25
24
22
23
NC
I/O7
64K x 16
RAM Array
512 X 2048
I/O
1
–
I/O
8
R
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
COLUMN DECODER
A
9
A
1
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
BLE
I/O
9
–
I/O
16
OE
WE
A
8
Selection Guide
7C1021BV-8
8
170
190
5
0.500
7C1021BV-10
10
160
180
5
0.500
7C1021BV-12
12
150
170
5
0.500
7C1021BV-15
15
140
160
5
0.500
Maximum Access Time (ns)
Maximum Operating Current (mA)
Commercial
Industrial
Commercial
Maximum CMOS Standby Current
(mA)
L
Shaded areas contain advance information.
Note:
1.
For guidelines on SRAM system design, please refer to the
‘
System Design Guidelines
’
Cypress application note, available on the internet at www.cypress.com.
相關(guān)PDF資料
PDF描述
CY7C1021BV33L-15ZC 64K x 16 Static RAM
CY7C1021CV33-10 64K x 16 Static RAM
CY7C1021CV33 64K x 16 Static RAM
CY7C1021CV33-10BAC 64K x 16 Static RAM
CY7C1021CV33-10BAI 64K x 16 Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1021CV26-15BAE 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 64K X 16 2.6V RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1021CV26-15BAET 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 64K X 16 2.6V RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1021CV26-15VXE 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 64K X 16 2.6V RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1021CV26-15VXET 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 64K X 16 2.6V RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1021CV26-15XEKJ 制造商:Cypress Semiconductor 功能描述:
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