參數(shù)資料
型號(hào)： CY7C1021-15
廠商： Cypress Semiconductor Corp.
英文描述： JUMPER CROSS FOR TERMINAL BLOCK
中文描述： 64K的× 16靜態(tài)RAM
文件頁數(shù)： 1/9頁
文件大?。?/td> 181K
代理商： CY7C1021-15
64K x 16 Static RAM
CY7C1021
Cypress Semiconductor Corporation
Document #: 38-05054 Rev. **
3901 North First Street
San Jose
CA 95134
408-943-2600
Revised August 24, 2001
021
Features
High speed
—t
AA
= 12 ns
CMOS for optimum speed/power
Low active power
—1320 mW (max.)
Automatic power-down when deselected
Independent Control of Upper and Lower bits
Available in 44-pin TSOP II and 400-mil SOJ
Functional Description
The CY7C1021 is a high-performance CMOS static RAM or-
ganized as 65,536 words by 16 bits. This device has an auto-
matic power-down feature that significantly reduces power
consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
15
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing the write
enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is LOW,
then data from memory will appear on I/O
9
to I/O
16
. See the
truth table at the back of this data sheet for a complete descrip-
tion of read and write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1021 is available in standard 44-pin TSOP Type II
and 400-mil-wide SOJ packages.
WE
A
15
A
14
A
13
A
NC
Logic Block Diagram
Pin Configuration
SOJ / TSOP II
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
31
30
32
36
35
34
33
37
40
39
38
Top View
41
44
43
42
16
17
29
28
V
CC
V
SS
I/O
5
I/O
6
A
4
A
3
A
2
A
1
A
0
OE
BHE
BLE
V
SS
V
CC
I/O
12
I/O
11
I/O
10
I/O
9
A
5
A
6
A
7
I/O
16
I/O
15
I/O
14
I/O
13
CE
I/O
1
I/O
2
I/O
3
I/O
4
NC
A
8
A
9
A
10
A
11
1021-2
18
19
20
21
27
26
25
24
22
23
NC
I/O
7
I/O
8
64K x 16
RAM Array
512 X 2048
I/O
1
–
I/O
8
R
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
COLUMN DECODER
A
9
A
1
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
BLE
I/O
9
–
I/O
16
OE
WE
A
8
Selection Guide
7C1021-10
10
220
5
0.5
7C1021-12
12
220
5
0.5
7C1021-15
15
220
5
0.5
7C1021-20
20
220
5
0.5
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
Commercial
Commercial
L
Shaded areas contain preliminary information.
相關(guān)PDF資料
PDF描述
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CY7C1021-15VI JUMPER CROSS FOR TERMINAL BLOCK
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CY7C1021-20 64K x 16 Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1021-15VC 制造商:Cypress Semiconductor 功能描述:
CY7C1021-15VCT 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 64K x 16 15ns 44-Pin SOJ T/R
CY7C10211B-10ZC 制造商:Cypress Semiconductor 功能描述:
CY7C10211BN-10ZXC 功能描述:IC SRAM 1MBIT 10NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY7C10211BN-10ZXCT 功能描述:IC SRAM 1MBIT 10NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
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