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參數(shù)資料
| 型號： | CY7C1020CV33 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 512K (32K x 16) Static RAM(512K (32K x 16)靜態(tài)RAM) |
| 中文描述： | 為512k（32K的× 16）靜態(tài)隨機存儲器（為512k（32K的× 16），靜態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 248K |
| 代理商： | CY7C1020CV33 |
512K (32K x 16) Static RAM
CY7C1020CV33
Cypress Semiconductor Corporation
Document #: 38-05133 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 3, 2006
Features
Pin- and function-compatible with CY7C1020V33
Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive: –40°C to 125°C
High speed
— t
AA
= 10 ns
CMOS for optimum speed/power
Low active power
— 325 mW (max.)
Automatic power-down when deselected
Independent control of upper and lower bits
Available in Pb-free and non Pb-free 44-pin TSOP II
package
Functional Description
The CY7C1020CV33 is a high-performance CMOS static
RAM organized as 32,768 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
14
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
14
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
9
to I/O
16
. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1020CV33 is available in standard 44-pin TSOP
Type II package.
WE
A
4
Logic Block Diagram
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
31
30
32
36
35
34
33
37
40
39
38
Top View
TSOP II
41
44
43
42
16
17
29
28
V
CC
V
SS
I/O
5
I/O
6
A
14
A
13
A
NC
NC
A
3
A
2
A
1
A
0
OE
BHE
BLE
V
SS
V
CC
I/O
12
I/O
11
I/O
10
I/O
9
A
5
A
6
A
7
I/O
16
I/O
15
I/O
14
I/O
13
CE
I/O
1
I/O
2
I/O
3
I/O
4
NC
A
8
A
9
A
10
A
11
18
19
20
21
27
26
25
24
22
23
NC
I/O
7
I/O
8
32K × 16
RAM Array
I/O
1
–I/O
8
R
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
COLUMN DECODER
A
9
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
BLE
I/O
9
–I/O
16
OE
WE
A
8
Note:
1. NC pins are not connected on the die
PinConfiguration
[1]
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1020CV33-10ZC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 512K-Bit 32K x 16 10ns 44-Pin TSOP-II |
| CY7C1020CV33-10ZCT | 制造商:Rochester Electronics LLC 功能描述:512K (32K X 16)-3.3V FAST ASYNCH SRAM - Tape and Reel |
| CY7C1020CV33-10ZXC | 功能描述:IC SRAM 512KBIT 10NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1020CV33-10ZXCT | 功能描述:IC SRAM 512KBIT 10NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C1020CV33-12ZC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 512K-Bit 32K x 16 12ns 44-Pin TSOP-II |
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