參數(shù)資料
型號： CY7C1018CV33-8VC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 128K x 8 Static RAM
中文描述： 128K X 8 STANDARD SRAM, 8 ns, PDSO32
封裝： 0.300 INCH, SOJ-32
文件頁數(shù)： 2/7頁
文件大小： 132K
代理商： CY7C1018CV33-8VC
CY7C1018CV33
Document #: 38-05131 Rev. *C
Page 2 of 7
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................
–
65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................
–
55
°
C to +125
°
C
Supply Voltage on V
CC
to Relative GND
[2]
...
–
0.5V to + 4.6V
DC Voltage Applied to Outputs
[7]
in High-Z State .......................................
–
0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
................................
–
0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Range
Ambient Temperature
0
°
C to +70
°
C
V
CC
Commercial
3.3V
±
10%
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
Description
Output HIGH Voltage
Test Conditions
V
CC
= Min.,
I
OH
=
–
4.0 mA
V
CC
= Min.,
I
OL
= 8.0 mA
7C1018CV33
-8
Min.
2.4
7C1018CV33
-10
Min.
2.4
7C1018CV33
-12
Min.
2.4
7C1018CV33
-15
Min.
2.4
Unit
V
Max.
Max.
Max.
Max.
V
OL
Output LOW Voltage
0.4
0.4
0.4
0.4
V
V
IH
Input HIGH Voltage
2.0
V
CC
+ 0.3
0.8
+1
+1
2.0
V
CC
+ 0.3
0.8
+1
+1
2.0
V
CC
+ 0.3
0.8
+1
+1
2.0
V
CC
+ 0.3
0.8
+1
+1
V
V
IL
I
IX
I
OZ
Input LOW Voltage
[2]
Input Load Current
Output Leakage
Current
Output Short
Circuit Current
V
CC
Operating
Supply Current
–
0.3
–
1
–
1
–
0.3
–
1
–
1
–
0.3
–
1
–
1
–
0.3
–
1
–
1
V
μ
A
μ
A
GND < V
I
< V
CC
GND < V
I
< V
CC
,
Output Disabled
V
CC
= Max.,
V
OUT
= GND
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
CE > V
CC
–
0.3V,
V
IN
> V
CC
–
0.3V,
or V
IN
< 0.3V, f = 0
I
OS[3]
–
300
-300
–
300
-300
mA
I
CC
95
90
85
80
mA
I
SB1
Automatic CE
Power-down Current
—
TTL Inputs
Automatic CE
Power-down Current
—
CMOS Inputs
15
15
15
15
mA
I
SB2
5
5
5
5
mA
Capacitance
[4]
Parameter
Description
Test Conditions
Max.
Unit
C
IN
Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 3.3V
8
pF
C
OUT
Output Capacitance
8
pF
Notes:
2.
3.
4.
V
(min.) =
–
2.0V for pulse durations of less than 20 ns.
Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Tested initially and after any design or process changes that may affect these parameters.
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參數(shù)描述
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