參數(shù)資料
型號(hào)： CY7C0853AV-100BBI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
中文描述： 256K X 36 DUAL-PORT SRAM, 4.7 ns, PBGA172
封裝： 15 X 15 MM, 1.25 MM HEIGHT, 1 MM PITCH, FBGA-172
文件頁(yè)數(shù)： 11/36頁(yè)
文件大小： 956K
代理商： CY7C0853AV-100BBI
CY7C0850AV,CY7C0851V/CY7C0851AV
CY7C0852V/CY7C0852AV
CY7C0853V/CY7C0853AV
Document #: 38-06070 Rev. *J
Page 19 of 36
Figure 10. Bank Select Read[31, 32]
Figure 11. Read-to-Write-to-Read (OE = LOW)[30, 33, 34, 35, 36]
Switching Waveforms (continued)
Q3
Q1
Q0
Q2
A0
A1
A2
A3
A4
A5
Q4
A0
A1
A2
A3
A4
A5
tSA
tHA
tSC
tHC
tSA
tHA
tSC
tHC
tSC
tHC
tSC tHC
tCKHZ
tDC
tCD2
tCKLZ
tCD2
tCKHZ
tCKLZ
tCD2
tCKHZ
tCKLZ
tCD2
tCH2
tCL2
tCYC2
CLK
ADDRESS(B1)
CE(B1)
DATAOUT(B2)
DATAOUT(B1)
ADDRESS(B2)
CE(B2)
tCYC2
tCL2
tCH2
tHC
tSC
tHW
tSW
tHA
tSA
tHW
tSW
tCD2
tCKHZ
tSD tHD
NO OPERATION
WRITE
READ
CLK
CE
R/W
ADDRESS
DATAIN
DATAOUT
An
An+1
An+2
Dn+2
An+3
An+4
Qn
Qn+3
Qn+1
tCD2
tCKLZ
Notes
31. In this depth-expansion example, B1 represents Bank #1 and B2 is Bank #2; each bank consists of one Cypress CY7C0851V/CY7C0851AV/CY7C0852V/CY7C0852AV
device from this data sheet. ADDRESS(B1) = ADDRESS(B2).
32. ADS = CNTEN= B0 – B3 = OE = LOW; MRST = CNTRST = CNT/MSK = HIGH.
33. Output state (HIGH, LOW, or high-impedance) is determined by the previous cycle control signals.
34. During “No Operation,” data in memory at the selected address may be corrupted and should be rewritten to ensure data integrity.
35. CE0 = OE = B0 – B3 = LOW; CE1 = R/W = CNTRST = MRST = HIGH.
36. CE0 = B0 – B3 = R/W = LOW; CE1 = CNTRST = MRST = CNT/MSK = HIGH. When R/W first switches low, since OE = LOW, the Write operation cannot be completed
(labelled as no operation). One clock cycle is required to three-state the I/O for the Write operation on the next rising edge of CLK.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C0853AV-133BBC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256Kx36 133MHz 9Mb SYNC DUAL PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C0853AV-133BBI 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 3.3V 9MBIT 256KX36 4.7NS 172FBGA - Trays
CY7C0853V-100BBC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 9MB (256Kx36) 3.3v 100MHz Synch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C0853V-100BBI 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 9M-Bit 256K x 36 5ns 172-Pin FBGA 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 9M-Bit 256K x 36 4.7ns 172-Pin FBGA 制造商:Rochester Electronics LLC 功能描述:3.3V 256K X 36 SYNC DUALPORT SRAM - Bulk
CY7C0853V-133BBC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 9MB (256Kx36) 3.3v 133MHz Synch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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