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| 型號(hào)： | CY7C025AV-20AC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM |
| 中文描述： | 8K X 16 DUAL-PORT SRAM, 20 ns, PQFP100 |
| 封裝： | PLASTIC, TQFP-100 |
| 文件頁(yè)數(shù)： | 10/19頁(yè) |
| 文件大小： | 241K |
| 代理商： | CY7C025AV-20AC |
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CY7C024AV/025AV/026AV
CY7C0241AV/0251AV/036AV
Document #: 38-06052 Rev. *E
Page 10 of 19
Data Retention Mode
The CY7C024AV/025AV/ 026AV and CY7C0241AV/ 0251AV/
036AV are designed with battery backup in mind. Data
retention voltage and supply current are guaranteed over
temperature. The following rules ensure data retention:
1. Chip Enable (CE) must be held HIGH during data retention,
within V
CC
to V
CC
– 0.2V.
2. CE must be kept between V
CC
– 0.2V and 70% of V
CC
during the power-up and power-down transitions.
3. The RAM can begin operation >t
RC
after V
CC
reaches the
minimum operating voltage (3.0V).
Notes:
23. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing with Busy waveform.
24. Test conditions used are Load 2.
25. t
is a calculated parameter and is the greater of t
–t
(actual) or t
–t
(actual).
26. CE = V
CC
, V
in
= GND to V
CC
, T
A
= 25
°
C. This parameter is guaranteed but not tested.
t
HD
t
HZWE[21, 22]
t
LZWE[21, 22]
t
WDD[23]
t
DDD[23]
Busy Timing
[24]
t
BLA
t
BHA
t
BLC
t
BHC
t
PS
t
WB
t
WH
t
BDD[25]
Interrupt Timing
[24]
t
INS
t
INR
Semaphore Timing
t
SOP
t
SWRD
t
SPS
t
SAA
Data Hold From Write End
R/W LOW to High Z
R/W HIGH to Low Z
Write Pulse to Data Delay
Write Data Valid to Read Data Valid
0
0
ns
ns
ns
ns
ns
12
15
3
0
45
30
50
35
BUSY LOW from Address Match
BUSY HIGH from Address Mismatch
BUSY LOW from CE LOW
BUSY HIGH from CE HIGH
Port Set-up for Priority
R/W HIGH after BUSY (Slave)
R/W HIGH after BUSY HIGH (Slave)
BUSY HIGH to Data Valid
20
20
20
17
20
20
20
17
ns
ns
ns
ns
ns
ns
ns
ns
5
0
15
5
0
17
20
25
INT Set Time
INT Reset Time
20
20
20
20
ns
ns
SEM Flag Update Pulse (OE or SEM)
SEM Flag Write to Read Time
SEM Flag Contention Window
SEM Address Access Time
10
5
5
12
5
5
ns
ns
ns
ns
20
25
Switching Characteristics
Over the Operating Range (continued)
[18]
Parameter
Description
CY7C024AV/025AV/026AV
CY7C0241AV/0251AV/036AV
-20
Min.
Max.
Unit
-25
Min.
Max.
Timing
Parameter
ICC
DR1
Test Conditions
[26]
@ VCC
DR
= 2V
Max.
50
Unit
μ
A
Data Retention Mode
3.0V
3.0V
V
CC
>
2.0V
V
CC
to V
CC
– 0.2V
V
CC
CE
t
RC
VIH
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| CY7C025AV-25AC | 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM |
| CY7C145AV-25JC | 3.3V 4K/8K/16K/32K x 8/9 Dual-Port Static RAM |
| CY7C1360B-166AC | CONNECTOR ACCESSORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C025AV-20AI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C025AV-20AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3V 8Kx16 COM Async Dual Port 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C025AV-20AXI | 功能描述:IC SRAM 128KBIT 20NS 100LQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C025AV-25AC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C025AV-25ACKJ | 制造商:Cypress Semiconductor 功能描述: |
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