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參數(shù)資料
| 型號： | CY7C0251AV-25AI |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM |
| 中文描述： | 3.3 4K/8K/16K x 16/18雙端口靜態(tài)存儲(chǔ)器 |
| 文件頁數(shù)： | 9/19頁 |
| 文件大?。?/td> | 241K |
| 代理商： | CY7C0251AV-25AI |
CY7C024AV/025AV/026AV
CY7C0241AV/0251AV/036AV
Document #: 38-06052 Rev. *E
Page 9 of 19
AC Test Loads and Waveforms
3.0V
GND
90%
90%
10%
3 ns
3 ns
10%
ALL INPUTPULSES
(a) Normal Load (Load 1)
R1 = 590
3.3V
OUTPUT
R2 = 435
C = 30 pF
V
TH
= 1.4V
OUTPUT
C = 30pF
(b) Thévenin Equivalent (Load 1)
(c) Three-State Delay (Load 2)
(Used for t
LZ
, t
HZ
, t
HZWE
, and t
LZWE
R1 = 590
R2 = 435
3.3V
OUTPUT
C = 5 pF
R
TH
= 250
≤
≤
including scope and jig)
Switching Characteristics
Over the Operating Range
[18]
Parameter
Read Cycle
t
RC
t
AA
t
OHA
t
ACE[19]
t
DOE
t
LZOE[20, 21, 22]
t
HZOE[20, 21, 22]
t
LZCE[20, 21, 22]
t
HZCE[20, 21, 22]
t
PU[22]
t
PD[22]
t
ABE[19]
Write Cycle
t
WC
t
SCE[19]
t
AW
t
HA
t
SA[19]
t
PWE
t
SD
Notes:
18. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
/I
and 30-pF load capacitance.
19. To access RAM, CE=L, UB=L, SEM=H. To access semaphore, CE=H and SEM=L. Either condition must be valid for the entire t
SCE
time.
20. At any given temperature and voltage condition for any given device, t
HZCE
is less than t
LZCE
and t
HZOE
is less than t
LZOE
.
21. Test conditions used are Load 3.
22. This parameter is guaranteed but not tested. For information on port-to-port delay through RAM cells from writing port to reading port, refer to Read Timing
with Busy waveform.
Description
CY7C024AV/025AV/026AV
CY7C0241AV/0251AV/036AV
-20
Min.
Max.
Unit
-25
Min.
Max.
Read Cycle Time
Address to Data Valid
Output Hold From Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE Low to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable Access Time
20
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
25
3
3
20
12
25
13
3
3
12
15
3
3
12
15
0
0
20
20
25
25
Write Cycle Time
CE LOW to Write End
Address Valid to Write End
Address Hold From Write End
Address Set-up to Write Start
Write Pulse Width
Data Set-up to Write End
20
15
15
0
0
15
15
25
20
20
0
0
20
15
ns
ns
ns
ns
ns
ns
ns
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| CY7C025AV-25AI | 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C0251E-15AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 8K x 18 DualPort RAM W/SEM INT BUSY RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C0251V | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM |
| CY7C025-25AC | 功能描述:IC SRAM 8KX16 DUAL 84-PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| CY7C025-25ACT | 制造商:Cypress Semiconductor 功能描述: |
| CY7C025-25AI | 制造商:Cypress Semiconductor 功能描述: |
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